SPU28N03L

SPD28N03L SIPMOS® Power Transistor Features N channel Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.018 Ω Avalanche rated Logic Level dv/dt rated 175°C operating temperature Type SPD28N03L SPU28N03L Package P-TO252 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4139-A2 Tape and Reel P-TO251-3-1 Q67040-S4142-A2 Tube www.DataSheet4U.com Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 28 112 145 7.5 6 kV/µs mJ Unit A ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 75 -55... +175 55/175/56 V W °C TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group SPD28N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 2 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown ...