WT-2306

WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT 2.8 AMPERES DRAIN SOURCE V OLTAGE 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 20 Unite V V A A A W C/W C +8 2.8 12 1.25 1.25 100 -55 to 150 Device Marking WT2306=S06 WEITRON http://www.weitron.com.tw WT-2306 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current +8V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=18V, VGS=0V Drain-Source On-Resistance VGS=4.0V, ID=2.8A VGS=2.5V, ID=2.0A Forward Transconductance VDS=7V, ID=5A 20 0.6 1.5 +100 1 70 95 V V nA uA mΩ - rDS (on) 5 gfs - S Dynamic (3) Input Capacitance VDS=10V, VGS=0V, f=1MHZ Output Capacitance VDS=10V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=10V, VGS=0V, f=1MHZ Ciss Coss Crss - 608 114 86 PF ...