EFFICIENCY SERIES. 10YQ045 Datasheet

10YQ045 SERIES. Datasheet pdf. Equivalent

Part 10YQ045
Description HIGH EFFICIENCY SERIES
Feature PD - 93860A SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 10YQ045 10 Amp, 45V Major Ratings and Chara.
Manufacture International Rectifier
Datasheet
Download 10YQ045 Datasheet




10YQ045
www.DataSheet4U.com
PD - 93860A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
10YQ045
10 Amp, 45V
Major Ratings and Characteristics
Characteristics
10YQ045
IF(AV)
VRRM
IFSM @ tp = 8.3ms half-sine
10
45
110
VF @ 10Apk, TJ =125°C
0.70
TJ,Tstg Operating and storage -55 to 150
Description/Features
Units
A
V
A
V
The 10YQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-257AA package. The device's forward voltage drop and
reverse leakage current are optimized for the lowest power
loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S levels.
Hermetically Sealed
°C Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Lightweight
Glass Eyelets
CASE STYLE
www.irf.com
IR Case Style TO-257AA
CATHODE OPEN ANODE
1
01/26/01



10YQ045
10YQ045
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
10YQ045
45
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
Limits
10
110
Units
Conditions
A 50% duty cycle @ TC = 109°C, square waveform
A @ tp = 8.3 ms half-sine
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
See Fig. 1Q
IRM Max. Reverse Leakage Current
See Fig. 2Q
Limits
0.74
0.95
0.73
1.02
0.70
1.10
0.50
23
67
Units
V
V
V
V
V
V
mA
mA
mA
Conditions
@ 10A
TJ = -55°C
@ 20A
@ 10A
TJ = 25°C
@ 20A
@ 10A
TJ = 125°C
@ 20A
TJ = 25°C
TJ = 100°C
VR = rated VR
TJ = 125°C
CT Max. Junction Capacitance
L S Typical Series Inductance
775 pF VR = 5VDC ( 1MHz, 25°C )
9.8 nH Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-Mechanical Specifications
Parameters
TJ Max.Junction Temperature Range
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance, Junction
to Case
wt Weight (Typical)
Die Size (Typical)
Case Style
Limits Units
-55 to 150 °C
-55 to 150 °C
2.6 °C/W
Conditions
DC operation See Fig. 4
3.3 g
125X125 mils
TO-257AA
Q Pulse Width < 300µs, Duty Cycle < 2%
2 www.irf.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)