Purpose Transistor. 2SD2654 Datasheet

2SD2654 Transistor. Datasheet pdf. Equivalent

Part 2SD2654
Description General Purpose Transistor
Feature 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15.
Manufacture Rohm
Datasheet
Download 2SD2654 Datasheet



2SD2654
Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
General Purpose Transistor (50V, 0.15A)
2SD2707 /2SD2654 /2SD2351 /2SD2226K /2SD2227S
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (VCBO=12V)
3) Low saturation voltage.
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2654, 2SD2707
2SD2351, 2SD2226K
2SD2227S
Junction temperature
Storage temperature
Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
12
0.15
0.2
0.15
0.2
0.3
150
55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
zExternal dimensions (Unit : mm)
2SD2707
ROHM : EMT3
2SD2654
1.2
0.2 0.8 0.2
(2)
(3)
(1)
(1)
(3) (2)
0.8
1.6
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
0.1Min.
2SD2351
(1) Emitter
(2) Base
(3) Collector
zPackaging specifications and hFE
Type
package
hFE
Marking
Code
Basic ordering unit (pleces)
Denotes hFE
2SD2707
VMT3
VW
BJ
T2L
8000
2SD2654
EMT3
VW
BJ
TL
3000
2SD2351
UMT3
VW
BJ
T106
3000
2SD2226K
SMT3
VW
BJ
T146
3000
2SD2227S
SPT
VW
TP
5000
1.25
2.1
ROHM : UMT3
EIAJ : SC-70
0.1Min.
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2SD2226K
1.6
2.8
ROHM : SMT3
EIAJ : SC-59
0.3Min.
Each lead has same dimensions
2SD2227S
42
(1) Emitter
(2) Base
(3) Collector
ROHM : SPT
EIAJ : SC-72
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Rev.A
1/3



2SD2654
Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
60
50
12
820
Typ.
250
3.5
Max.
0.3
0.3
0.3
2700
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=50V
VEB=12V
IC/IB=50mA/5mA
VCE/IC=5V/1mA
VCE=5V, IE=−10mA, f=100MHz
VCB=5V, IE=0A, f=1MHz
zElectrical characteristics curves
2.0
Ta=25°C
1.2µA
1.6 2.0µA
1.8µA
1.6µA
1.2 1.4µA
1.0µA
0.8µA
0.6µA
0.8
0.4µA
0.4 0.2µA
IB=0
00 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics ( Ι )
200
500µA
160 450µA
400µA
350µA
300µA
120
250µA
200µA
150µA
100µA
80 50µA
40
00
Ta=25°C
Measured
using pulse current
48
12
IB=0
16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
200
VCE=5V
100
50
20
10
5
2
1
0.5
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
Measured
using pulse current
VCE=10V
5V
3V
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
10000
5000
2000
1000
500
Ta=100°C
25°C
VCE=5V
Measured
using pulse current
25°C
200
100
50
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
1000
500
Ta=25°C
200
100
IC / IB=50
50
20
20 10
10
5
2
1
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
Rev.A
2/3







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