Transistors. 2SD2703 Datasheet

2SD2703 Transistors. Datasheet pdf. Equivalent

Part 2SD2703
Description Transistors
Feature 2SD2703 Transistors General purpose amplification (30V, 1A) 2SD2703 zApplication Low frequency ampl.
Manufacture Rohm
Datasheet
Download 2SD2703 Datasheet




2SD2703
Transistors
2SD2703
General purpose amplification (30V, 1A)
2SD2703
zApplication
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) 350mV
At IC = 500mA / IB = 25mA
zExternal dimensions (Unit : mm)
(2)
(3)
(1)
0.2 1.7 0.2
2.1
0.15Max.
ROHM : TUMT3 Abbreviated symbol : EU
(1) Base
(2) Emitter
(3) Collector
www.DataSheet4U.com
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1Single pulse, PW=1ms
2Mounted on a 25×25× t 0.8mm Ceramic substrate
Limits
30
30
6
1
2
0.4
0.8 2
150
55 to +150
Unit
V
V
V
A
A 1
W
°C
°C
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SD2703
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 30 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO − − 100 nA VCB=30V
Emitter cutoff current
IEBO − − 100 nA VEB=6V
Collector-emitter saturation voltage
DC current gain
Transition frequency
VCE(sat) 120 350 mV IC/IB=500mA/25mA
hFE 270 680 VCE/IC=2V/100mA
fT 320 MHz VCE=2V, IE=−100mA, f=100MHz
Corrector output capacitance
Cob 7 pF VCB=10V, IE=0A, f=1MHz
Pulsed
Rev.A
1/2



2SD2703
Transistors
zElectrical characteristic curves
1000
Ta=100°C
Ta=25°C
100
Ta=−40°C
10
0.001
VCE=2V
Pulsed
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.1 DC current gain
vs. collector current
2SD2703
10
VBE(sat)
Ta=−40°C
Ta=25°C
1 Ta=100°C
IC/IB=20 /1
Pulsed
0.1 Ta=100°C
0.01
0.001
VCE(sat)
Ta=25°C
Ta=−40°C
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
10
Ta=25°C
VCE=2V
1
0.1
IC/IB=50/1
IC/IB=20/1
0.01
IC/IB=10/1
0.001
0.001
0.01 0.1
COLLECTOR CURRENT : IC (A)
1
Fig.3 Collector-emitter saturation voltage
vs. collector current
1 1000
VCE=2V
Pulsed
0.1
Ta=100°C
0.01
Ta=25°C
Ta=−40°C
0.001
0
0.5 1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
100
10
0.01
VCE=2V
Ta=25°C
f=100MHz
0.1
EMITTER CURRENT : IE (A)
1
Fig.5 Gain bandwidth product
vs. emitter current
1000
100
10
tdon
tr
tstg
tf
Ta=25°C
VCE=5V
1 IC/IB=20/1
0.01
0.1
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
1
100
Cib
Cob
10
IC=0A
f=1MHz
Ta=25°C
1
0.01 0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)