Transistors. 2SD2702 Datasheet

2SD2702 Transistors. Datasheet pdf. Equivalent

Part 2SD2702
Description Transistors
Feature 2SD2702 Transistors General purpose amplification (12V, 1.5A) 2SD2702 zApplication Low frequency am.
Manufacture Rohm
Datasheet
Download 2SD2702 Datasheet



2SD2702
Transistors
2SD2702
General purpose amplification (12V, 1.5A)
2SD2702
zApplication
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) =< 200mV
at IC = 500mA / IB = 25mA
zExternal dimensions (Unit : mm)
(2)
(3)
(1)
0.2 1.7 0.2
2.1
0.15Max.
ROHM : TUMT3 Abbreviated symbol : ES (1) Base
(2) Emitter
(3) Collector
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zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Single pulse, PW=1ms
2 Mounted on a 25×25× t 0.8mm Ceramic substrate
Limits
15
12
6
1.5
3
0.4
0.8 2
150
55 to +150
Unit
V
V
V
A
A1
W
°C
°C
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SD2702
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO − − 100 nA VCB=15V
Emitter cutoff current
IEBO − − 100 nA VEB=6V
Collector-emitter saturation voltage
DC current gain
Transition frequency
VCE(sat)
85 200 mV IC/IB=500mA/25mA
hFE 270 680 VCE/IC=2V/200mA
fT 400 MHz VCE=2V, IE=−200mA, f=100MHz
Collector output capacitance
Cob 12 pF VCB=10V, IE=0A, f=1MHz
Pulsed
Rev.A
1/2



2SD2702
Transistors
2SD2702
zElectrical characteristic curves
1000
Ta=100°C
Ta=25°C
100
Ta=−40°C
10
0.001
VCE=2V
Pulsed
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.1 DC current gain
vs. collector current
10
Ta=−40°C
Ta=25°C
VBE(sat)
Ta=100°C
1
IC/IB=20 /1
Pulsed
0.1
0.01
VCE(sat)
Ta=100°C
Ta=25°C
Ta=−40°C
1
0.1
IC/IB=50/1
0.01 IC/IB=20/1
IC/IB=10/1
Ta=25°C
VCE=2V
0.001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
1
Ta=100°C
0.1
VCE=2V
Pulsed
1000
Ta=25°C
100
0.01
Ta=−40°C
0.001
0
0.5 1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
10
0.001
VCE=2V
Ta=25°C
Pulsed
0.01
0.1
1
EMITTER CURRENT : IE (A)
10
Fig.5 Gain bandwidth product
vs. emitter current
1000
100
Ta=25°C
VCE=2V
f=100MHz
tstg
10
tdon
tf
1
0.01
tr
0.1 1
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
10
100
IE=0A
Cib f=1MHz
Ta=25°C
Cob
10
1
0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A 2/2





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