Transistors. 2SD2701 Datasheet

2SD2701 Transistors. Datasheet pdf. Equivalent

Part 2SD2701
Description Transistors
Feature 2SD2701 Transistors Low frequency amplifier 2SD2701 zApplication Low frequency amplifier Driver zEx.
Manufacture Rohm
Datasheet
Download 2SD2701 Datasheet




2SD2701
Transistors
Low frequency amplifier
2SD2701
2SD2701
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) 350mV
At IC = 1A / IB = 50mA
zExternal dimensions (Unit : mm)
(2)
(3)
(1)
0.2 1.7 0.2
2.1
0.15Max.
ROHM : TUMT3 Abbreviated symbol : FZ
(1) Base
(2) Emitter
(3) Collector
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zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
12
6
Collector current
IC 2
ICP 4
Power dissipation
PC
0.4
0.82
Junction temperature
Tj 150
Range of storage temperature Tstg 55 to +150
1 Single pulse, PW=1ms
2 Mounted on a 25×25× t0.8mm Ceramic substrate
Unit
V
V
V
A
A1
W
°C
°C
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2701
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
30
6
270
Typ.
140
300
11
Max.
100
100
350
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=30V
VEB=6V
IC=1A, IB=50mA
VCE=2V, IC=100mA
VCE=2V, IE=−100mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Rev.A
1/2



2SD2701
Transistors
zElectrical characteristic curves
1000
VCE=2V
Ta=100°C
Pulsed
Ta=25°C
Ta=−40°C
100
10
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.1 DC current gain
vs. collector current
2SD2701
10
VBE(sat)
1
Ta=−40°C
Ta=25°C
Ta=100°C
IC/IB=20 /1
Pulsed
0.1
VCE(sat)
Ta=100°C
Ta=25°C
0.01
0.001
Ta=−40°C
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1
Ta=25°C
Pulsed
0.1
IC/IB=50/1
IC/IB=20/1
0.01
0.001
0.01
IC/IB=10/1
0.1 1
COLLECTOR CURRENT : IC (A)
10
Fig.3 Collector-emitter saturation voltage
vs. collector current
1
VCE=2V
Pulsed
0.1 Ta=100°C
Ta=25°C
Ta=−40°C
0.01
0.001
0 0.5 1 1.5
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
1000
Ta=25°C
VCE=2V
f=100MHz
100
10
0.01
0.1 1
EMITTER CURRENT : IE (A)
10
Fig.5 Gain bandwidth product
vs. emitter current
1000
100
Ta=25°C
VCE=5V
tstg f=100MHz
tf
tdon
10
tr
1
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.6 Switching time
1000
Ta=25°C
IC=0A
f=1MHz
100 Cib
Cob
10
1
0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2







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