2SD2701

2SD2701 Transistors Low frequency amplifier 2SD2701 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) (2) 0.3 2.0 0.85Max. (3) (1) zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA 0.2 1.7 2.1 0.2 0.17 0~0.1 0.15Max. 0.77 0.65 0.65 1.3 ROHM : TUMT3 Abbreviated symbol : FZ (1) Base (2) Emitter (3) Collector zAbsolute maximum ratings (Ta=25°C) www.DataSheet4U.com zPackaging specifications Unit V V V A A ∗1 W °C °C Package Type Code Basic ordering unit (pieces) 2SD2701 Taping TL 3000 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 15 12 6 2 4 0.4 0.8∗2 150 −55 to +150 ∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 140 − 300 11 Max. − − − 100 100 350 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=1A, IB=50mA VCE=2V, IC=100mA ∗ VCE=2V, IE=−100mA, f=100MHz ∗ VCB=10V...