Transistors. 2SD2700 Datasheet

2SD2700 Transistors. Datasheet pdf. Equivalent

Part 2SD2700
Description Transistors
Feature Transistors Low frequency amplifier 2SD2700 2SD2700 zApplication Low frequency amplifier Driver z.
Manufacture Rohm
Datasheet
Download 2SD2700 Datasheet



2SD2700
Transistors
Low frequency amplifier
2SD2700
2SD2700
zApplication
Low frequency amplifier
Driver
zDimensions (Unit : mm)
zFeatures
1) A collector current is large.
2) VCE(sat) 180mV
at IC = 1A / IB = 50mA
ROHM : TUMT3 Abbreviated symbol : FW
(1) Base
(2) Emitter
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
12
6
Collector current
IC 2
ICP 4
Power dissipation
PC
0.4
0.82
Junction temperature
Tj 150
Range of storage temperature Tstg 55 to +150
1 Single pulse, PW=1ms
2 Mounted on a 25×25× t0.8mm Ceramic substrate
Unit
V
V
V
A
A1
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
15 − − V IC=10µA
12 − − V IC=1mA
6 − − V IE=10µA
− − 100 nA VCB=15V
− − 100 nA VEB=6V
90 180 mV IC=1A, IB=50mA
270 680 VCE=2V, IC=200mA
360 MHz VCE=2V, IE=−200mA, f=100MHz
20 pF VCB=10V, IE=0A, f=1MHz
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
2SD2700
Taping
TL
3000
Rev.B
1/2



2SD2700
Transistors
zElectrical characteristic curves
1000
Ta=100°C
Ta=25°C
Ta=−40°C
VCE=2V
Pulsed
100
10
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.1 DC current gain
vs. collector current
2SD2700
1
IC/IB=20/1
VCE=2V
Pulsed
0.1
Ta=100°C
Ta=25°C
Ta=−40°C
0.01
0.001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.2 Base-emitter saturation voltage
vs. collector current
1
Ta=25°C
Pulsed
0.1
IC/IB=50/1
0.01
IC/IB=20/1
IC/IB=10/1
0.001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
1
Ta=100°C
0.1
0.01
VCE=2V
Pulsed
Ta=25°C
Ta=−40°C
0.001
0 0.5 1 1.5
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
1000
Ta=25°C
VCE=2V
f=100MHz
100
10
0.001
0.01 0.1
1
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
10
1000
Ta=25°C
VCE=5V
f=100MHz
tstg
100
10 tdon
tf
1
0.01
tr
0.1 1
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
10
1000
Ta=25˚C
IC=0A
f=1MHz
Cib
100
Cob
10
1
0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2







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