Darlington Transistor. 2SD2712 Datasheet

2SD2712 Transistor. Datasheet pdf. Equivalent

Part 2SD2712
Description NPN Triple Diffused Planar Silicon Darlington Transistor
Feature Ordering number : ENN8402 2SD2712 2SD2712 Applications • NPN Triple Diffused Planar Silicon Darli.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SD2712 Datasheet




2SD2712
Ordering number : ENN8402
2SD2712
2SD2712
NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
Applications
Suitable for use in control motor drivers, printer hammer drivers, relay drivers, audio output and
constant-voltage regulators.
Features
High DC current gain.
Wide ASO.
Low saturation voltage.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
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Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
180
160
6
10
16
2.5
110
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector Sustain Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
VCEO(SUS)
VCB=180V, IE=0A
VEB=6V, IC=0A
VCE=5V, IC=6.5A
VCE=5V, IC=6.5A
IC=5.5A, IB=11mA
IC=5.5A, IB=11mA
IC=1mA, IE=0A
IC=100mA, IB=0A
min
5000
180
160
Ratings
typ
max
0.1
10
Unit
mA
mA
15 MHz
1.5 V
2.3 V
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81205CB MS IM TB-00001697 No.8402-1/3



2SD2712
Continued from preceding page.
Parameter
Turn-ON Time
Storage Time
Fall Time
2SD2712
Symbol
ton
tstg
tf
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ max
0.9
8.0
3.0
Unit
µs
µs
µs
Package Dimensions
unit : mm
7503-003
15.6
14.0 3.2
4.8
2.0
1.6
2.0
1.0
1 23
0.6
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Switching Time Test Circuit
PW=50µs INPUT
D.C.1%
50
IB1
T.U.T
IB2
RB
VR
R1 R2
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=50V
IC=500IB1=500IB2=6.5A
10
from above
9 10mA
8 9mA
8mA
7 7mA
6mA
6 5mA
5 4mA
3mA
4
IC -- VCE
2mA
1mA
800µA
600µA
3
2
1
0
0
100000
7
5
3
2
400µA
IB=0µA
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V IT06685
hFE -- IC
VCE=5V
10000
7
5
3
2
Ta=1202-°-5C4°0C°C
1000
7
5
3
2
100
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT06687
IC -- VBE
10
VCE=5V
9
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Base-to-Emitter Voltage, VBE -- V IT06686
VCE(sat) -- IC
10
7 IC / IB=500
5
3
2
25°C
1.0 Ta= --40°C
7
5 120°C
3
2
0.1
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT06688
No.8402-2/3







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