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APM2317A Dataheets PDF



Part Number APM2317A
Manufacturers Anpec Electronics
Logo Anpec Electronics
Description P-Channel MOSFET
Datasheet APM2317A DatasheetAPM2317A Datasheet (PDF)

APM2317A P-Channel Enhancement Mode MOSFET Features • -20V/-4.5A , RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V Pin Description • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 S Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D www.DataSheet4U.com G P-Channel MOSFET Ordering and Marking Information APM2317 Lead Free Code .

  APM2317A   APM2317A



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APM2317A P-Channel Enhancement Mode MOSFET Features • -20V/-4.5A , RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V Pin Description • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 S Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D www.DataSheet4U.com G P-Channel MOSFET Ordering and Marking Information APM2317 Lead Free Code Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150° C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2317A : M17X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 1 www.anpec.com.tw APM2317A Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in2 pad area, t (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V Rating -20 ±12 -4.5 -18 -1 150 -55 to 150 0.83 0.3 150 Unit V A A °C W °C/W ≤ 10sec. (TA = 25°C unless otherwise noted) Electrical Characteristics Symbol Parameter Test Condition APM2317A Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS VGS(th) IGSS RDS(ON) VSD a a -20 -1 -30 -0.5 -0.7 -1 ±100 28 38 55 -0.7 14 35 50 75 -1.3 20 V µA V nA Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±12V, VDS=0V VGS=-4.5V, IDS=-4.5A VGS=-2.5V, IDS=-2.5A VGS=-1.8V, IDS=-2A ISD=-1A, VGS=0V mΩ V Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge Gate-Source Charge VDS=-10V, VGS=-4.5V, IDS=-4.5A 2.1 4.7 nC Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 2 www.anpec.com.tw APM2317A Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) APM2317A Min. Typ. Max. Test Condition Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf trr qrr Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω 7 1520 225 165 6 13 86 42 21 9 12 24 156 77 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge ns ISD=-4.5A, dlSD/dt =100A/µs ns nC a : Pulse test ; pulse width≤300 µs, duty cycle ≤2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 3 www.anpec.com.tw APM2317A Typical Characteristics Power Dissipation 1.0 0.9 0.8 5.0 4.5 4.0 Drain Current -ID - Drain Current (A) 0.7 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160 o Ptot - Power (W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 0.0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 50 Thermal Transient Impedance 2 Normalized Transient Thermal Resistance 1 Duty = 0.5 0.2 0.1 -ID - Drain Current (A) Rd s(o n) Lim it 10 300µs 1ms 0.1 0.05 0.02 0.01 1 10ms 0.1 100ms 1s DC 0.01 Single Pulse T =25 C 0.01 A 0.01 0.1 o 1 10 100 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RθJA : 150 C/W 2 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 4 www.anpec.com.tw APM2317A Typical Characteristics (Cont.) Output Characteristics 18 16 14 VGS= -3, -4, -5, -6, -7, -8, -9, -10V 100 90 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) -2V 80 70 60 50 40 30 20 10 0 VGS=1.8V -ID - Drain Current (A) 12 10 8 6 4 2 0 0.0 -1.5V VGS=2.5V VGS=4.5V 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 18 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance 80 ID= -4.5A 70 Gate Threshold Voltage 1.8 IDS = -250µA 1.6 RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage 0 1 .


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