Document
APM2317A
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-4.5A , RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V
Pin Description
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
Top View of SOT-23
S
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
D
www.DataSheet4U.com
G
P-Channel MOSFET
Ordering and Marking Information
APM2317 Lead Free Code Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150° C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM2317A :
M17X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 1 www.anpec.com.tw
APM2317A
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA*
Note: *Surface Mounted on 1in2 pad area, t
(TA = 25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V
Rating -20 ±12 -4.5 -18 -1 150 -55 to 150 0.83 0.3 150
Unit
V A A °C W °C/W
≤ 10sec.
(TA = 25°C unless otherwise noted)
Electrical Characteristics
Symbol Parameter
Test Condition
APM2317A Min. Typ. Max.
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS VGS(th) IGSS RDS(ON) VSD
a a
-20 -1 -30 -0.5 -0.7 -1 ±100 28 38 55 -0.7 14 35 50 75 -1.3 20
V µA V nA
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±12V, VDS=0V VGS=-4.5V, IDS=-4.5A VGS=-2.5V, IDS=-2.5A VGS=-1.8V, IDS=-2A ISD=-1A, VGS=0V
mΩ V
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
Gate-Source Charge
VDS=-10V, VGS=-4.5V, IDS=-4.5A
2.1 4.7
nC
Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006
2
www.anpec.com.tw
APM2317A
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted)
APM2317A Min. Typ. Max.
Test Condition
Unit
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf
trr qrr Notes:
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω
7 1520 225 165 6 13 86 42 21 9 12 24 156 77
Ω pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge
ns
ISD=-4.5A, dlSD/dt =100A/µs
ns nC
a : Pulse test ; pulse width≤300 µs, duty cycle ≤2%. b : Guaranteed by design, not subject to production testing.
Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006
3
www.anpec.com.tw
APM2317A
Typical Characteristics
Power Dissipation
1.0 0.9 0.8
5.0 4.5 4.0
Drain Current
-ID - Drain Current (A)
0.7
3.5 3.0 2.5 2.0 1.5 1.0 0.5 TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160
o
Ptot - Power (W)
0.6 0.5 0.4 0.3 0.2 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160
o
0.0
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
50
Thermal Transient Impedance
2
Normalized Transient Thermal Resistance
1
Duty = 0.5 0.2 0.1
-ID - Drain Current (A)
Rd s(o n) Lim it
10
300µs 1ms
0.1
0.05 0.02 0.01
1
10ms
0.1
100ms 1s DC
0.01
Single Pulse
T =25 C 0.01 A 0.01 0.1
o
1
10
100
1E-3 1E-4 1E-3 0.01
Mounted on 1in pad o RθJA : 150 C/W
2
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006
4
www.anpec.com.tw
APM2317A
Typical Characteristics (Cont.)
Output Characteristics
18 16 14 VGS= -3, -4, -5, -6, -7, -8, -9, -10V
100 90
Drain-Source On Resistance
RDS(ON) - On - Resistance (mΩ)
-2V
80 70 60 50 40 30 20 10 0
VGS=1.8V
-ID - Drain Current (A)
12 10 8 6 4 2 0 0.0 -1.5V
VGS=2.5V VGS=4.5V
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12
15
18
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Drain-Source On Resistance
80 ID= -4.5A 70
Gate Threshold Voltage
1.8 IDS = -250µA 1.6
RDS(ON) - On - Resistance (mΩ)
Normalized Threshold Voltage
0 1 .