DatasheetsPDF.com

APM2318A Dataheets PDF



Part Number APM2318A
Manufacturers Anpec Electronics
Logo Anpec Electronics
Description N-Channel MOSFET
Datasheet APM2318A DatasheetAPM2318A Datasheet (PDF)

APM2318A N-Channel Enhancement Mode MOSFET Features • 30V/3A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V Pin Description D G S • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S www.DataSheet4U.com G N-Channel MOSFET Ordering and Marking Information APM2318 Lead Free Code Handl.

  APM2318A   APM2318A


Document
APM2318A N-Channel Enhancement Mode MOSFET Features • 30V/3A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V Pin Description D G S • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S www.DataSheet4U.com G N-Channel MOSFET Ordering and Marking Information APM2318 Lead Free Code Handling Code Tem p. Range Package Code Package Code A : SOT-23 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2318 A : M18X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM2318A Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Rating 30 ±12 VGS=10V 3 12 1 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 W °C/W A °C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM2318A Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS VGS(th) IGSS RDS(ON) VSD a a 30 1 30 0.5 0.7 35 40 60 0.7 1 ±100 50 55 80 1.3 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±12V, VDS=0V VGS=10V, IDS=3A Drain-Source On-state Resistance VGS=4.5V, IDS=2A VGS=2.5V, IDS=1.5A Diode Forward Voltage b ISD=0.5A, VGS=0V Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 12 VDS=15V, VGS=10V, IDS=3A 0.8 0.8 16 nC Gate-Source Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM2318A Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) APM2318A Min. Typ. Max. Test Condition Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 1.5 320 25 15 11 17 37 20 22 32 68 38 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM2318A Typical Characteristics Power Dissipation 1.0 0.9 3.0 0.8 0.7 2.5 2.0 1.5 1.0 0.5 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o Drain Current 3.5 0.6 0.5 0.4 0.3 0.2 ID - Drain Current (A) Ptot - Power (W) 0.0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 50 2 1 Thermal Transient Impedance 10 ID - Drain Current (A) on )L im Duty = 0.5 it 300µs 1ms s( 1 10ms Rd 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RθJA : 150 C/W 2 100ms 0.1 1s DC 0.01 0.01 TA=25 C 0.1 1 10 100 o 0.01 1E-4 1E-3 0.01 0.1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM2318A Typical Characteristics (Cont.) Output Characteristics 12 VGS= 3,4,5,6,7,8,9,10V 2V 100 90 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 10 80 70 60 50 40 30 20 10 VGS=4.5V VGS=10V VGS=2.5V ID - Drain Current (A) 8 6 4 1.5V 2 0 0 0 1 2 3 4 5 0 2 4 6 8 10 12 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 12 1.8 1.6 Gate Threshold Voltage IDS =250µA Normalized Threshold Voltage 3.0 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ID - Drain Current (A) 8 6 Tj=125 C o o 4 2 Tj=25 C Tj=-55 C o 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  .


APM2317A APM2318A B25667


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)