Document
APM2318A
N-Channel Enhancement Mode MOSFET
Features
•
30V/3A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V
Pin Description
D
G S
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23
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Applications
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Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
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www.DataSheet4U.com
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N-Channel MOSFET
Ordering and Marking Information
APM2318 Lead Free Code Handling Code Tem p. Range Package Code Package Code A : SOT-23 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM2318 A :
M18X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw
APM2318A
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA*
Note: *Surface Mounted on 1in pad area, t ≤ 10sec.
2
(TA = 25°C unless otherwise noted)
Rating 30 ±12 VGS=10V 3 12 1 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 W °C/W A °C V A Unit
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted)
APM2318A Min. Typ. Max.
Test Condition
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS VGS(th) IGSS RDS(ON) VSD
a a
30 1 30 0.5 0.7 35 40 60 0.7 1 ±100 50 55 80 1.3
V µA V nA mΩ V
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current
VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±12V, VDS=0V VGS=10V, IDS=3A
Drain-Source On-state Resistance VGS=4.5V, IDS=2A VGS=2.5V, IDS=1.5A Diode Forward Voltage
b
ISD=0.5A, VGS=0V
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
12 VDS=15V, VGS=10V, IDS=3A 0.8 0.8
16 nC
Gate-Source Charge
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM2318A
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted)
APM2318A Min. Typ. Max.
Test Condition
Unit
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf
Notes:
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
1.5 320 25 15 11 17 37 20 22 32 68 38
Ω pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM2318A
Typical Characteristics
Power Dissipation
1.0 0.9 3.0 0.8 0.7 2.5 2.0 1.5 1.0 0.5 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160
o
Drain Current
3.5
0.6 0.5 0.4 0.3 0.2
ID - Drain Current (A)
Ptot - Power (W)
0.0
TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
o
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
50 2 1
Thermal Transient Impedance
10
ID - Drain Current (A)
on )L
im
Duty = 0.5
it
300µs 1ms
s(
1
10ms
Rd
0.2 0.1
0.1
0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RθJA : 150 C/W
2
100ms
0.1
1s DC
0.01 0.01
TA=25 C 0.1 1 10 100
o
0.01 1E-4 1E-3 0.01
0.1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
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APM2318A
Typical Characteristics (Cont.)
Output Characteristics
12 VGS= 3,4,5,6,7,8,9,10V 2V
100 90
Drain-Source On Resistance
RDS(ON) - On - Resistance (mΩ)
10
80 70 60 50 40 30 20 10 VGS=4.5V VGS=10V VGS=2.5V
ID - Drain Current (A)
8
6
4
1.5V
2
0
0
0
1
2
3
4
5
0
2
4
6
8
10
12
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
12 1.8 1.6
Gate Threshold Voltage
IDS =250µA
Normalized Threshold Voltage
3.0
10
1.4 1.2 1.0 0.8 0.6 0.4 0.2
ID - Drain Current (A)
8
6 Tj=125 C
o o
4
2
Tj=25 C
Tj=-55 C
o
0 0.0
0.5
1.0
1.5
2.0
2.5
0.0 -50 -25
0
25
50
75
100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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