N-Channel MOSFET. 2SK3667 Datasheet

2SK3667 MOSFET. Datasheet pdf. Equivalent

Part 2SK3667
Description N-Channel MOSFET
Feature 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regu.
Manufacture Toshiba Semiconductor
Datasheet
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2SK3667
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2SK3667
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3667
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
High forward transfer admittance: |Yfs| = 5.5S (typ.)
Low leakage current: IDSS = 100μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
600
600
±30
7.5
30
45
189
7.5
4.5
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C, L = 5.88 mH, IAR = 7.5 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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1 2004-12-07



2SK3667
2SK3667
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
VGS = ±25 V, VDS = 0 V
IG 10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 10 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50
ID = 4 A VOUT
RL = 50
±30
600
2.0
1.5
tf
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 7.5 A
Qgd
Typ. Max
0.75
5.5
1300
12
120
±10
100
4.0
1.0
20
50
35
150
33
18
15
Unit
µA
V
µA
V
V
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 7.5 A, VGS = 0 V
IDR = 7.5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯ ⎯ 7.5 A
⎯ ⎯ 30 A
⎯ ⎯ −1.7 V
1200
ns
12 ⎯ µC
Marking
K3667
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-12-07







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