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MMBT5400 / MMBT5401
MMBT5400 / MMBT5401 PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 0.4 3 1.3±0.1 1.1
PNP
250 mW SOT-23 (TO-236) 0.01 g
Version 2006-05-16 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 1.9 2
Dimensions - Maße [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS
2.5 max
Grenzwerte (TA = 25°C) MMBT5400 120 V 130 V 5V 250 mW 1) 600 mA -55...+150°C -55…+150°C MMBT5401 150 V 160 V
Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis )
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Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – Max. – 180 – – 240 – 0.2 V 0.5 V 1.0 V 1.0 V
- VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA
MMBT5400
hFE hFE hFE hFE hFE hFE - VCEsat - VCEsat - VBEsat - VBEsat
30 40 40 50 60 50 – – – –
MMBT5401
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/
© Diotec Semiconductor AG
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MMBT5400 / MMBT5401 Characteristics (Tj = 25°C) Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 100 V, (E open) - VCB = 120 V, (E open) - VCB = 100 V, Tj = 100°C, (E open) - VCB = 120 V, Tj = 100°C, (E open) - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - IC = 10 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RS = 10 Ω, f = 1 kHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung MMBT5400 MMBT5401 F F RthA – – – – < 420 K/W 1) MMBT5550 / MMBT5551 MMBT5400 = 2L MMBT5401 = 2Lx – 8 dB CCBO – – 6 pF fT 100 MHz – 300 MHz MMBT5400 MMBT5401 MMBT5400 MMBT5401 - ICBO - ICBO - ICBO - ICBO - IEBO – – – – – – – – – –50 nA 50 nA 50 µA 50 µA 50 nA Kennwerte (Tj = 25°C)
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
120 [%] 100
80
60
40
20 Ptot 0 0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1)
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Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG
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