SP4T Monolithic PIN Diode Switch
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SP4T Monolithic PIN Diode Switch
Features
n n n n
V 1.00
MA4SW410
Outline Drawing
Ultra Broad B...
Description
www.DataSheet4U.com
SP4T Monolithic PIN Diode Switch
Features
n n n n
V 1.00
MA4SW410
Outline Drawing
Ultra Broad Bandwidth : 50 MHz to 26 GHz 0.9 Insertion Loss , 34 dB Isolation at 20 GHz 50 ns Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction
Description
The MA4SW410 is a SP4T Series-Shunt Broad Band Switch made with M/A-COM’s Unique HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form Series and Shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies.
Applications
These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 50 nS Switching Speeds are Achieved.
Nominal Die Dimensions
Inches Dim A B C D Nominal .066 .047 .054 .012 .043 .009 .004 .004 .033 .061 Millimeters Nominal 1.67 1.17 1.37 0.31 1.08 0.22 0.11 0.11 0.84 1.56
Absolute Maximum Ratings
1
E F G H I J
@ TA = +25 °C (unless otherwise specified)
Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 mA) Bias Current Forward Applied Voltage (Reverse) Value -65 °C to +125 °C 65 °C to +150 °C + 30 dBm +/-50 mA...
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