MA4VAT900-1277T

www.DataSheet4U.com HMIC PIN Diode Variable Attenuator 0.80-1.0 GHz Features Bandwidth: 0.80 GHz to 1.00 GHz <1.0 dB Insertion Loss, Typical 1.4:1 VSWR, Typical 24 dB Attenuation, Typical 40 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc ) 0-1.8 Volt Control Voltage. User can add an External Resistor for higher voltage requirements. RoHs Compliant MA4VAT900-1277T V2 MLP 3mm Package—Circuit Side View Extra Features Usable Bandwidth: 0.60 GHz to 2.00 GHz 1.9 dB Insertion Loss, Max 2:1 VSWR, Max 20 dB Attenuation, Max PIN 1 PIN 16 PIN Configuration PIN 1 2 3 4 5 6 Function GND GND GND GND GND RF2 GND GND PIN 9 10 11 12 13 14 15 16 Function DC2 GND GND DC1 GND GND RF1 GND Description and Applications M/A-COM’s MA4VAT900-1277T is a HMIC MONLITHIC PIN Diode Variable Attenuator which utilizes an integrated 90 degree 3dB hybrid with a pair of Silicon PIN Diodes to perform the required attenuation function as Voltage (Current) is applied. This device operates from 0 to 2 Volts at 330 uA typical control current for maximum attenuation. The user can add external biasing resistors to the bias ports for higher voltage requirements as required. M/A-COM’s MA4VAT900-1277T PIN Diode Variable Attenuator is designed for AGC Circuit Applications requiring: Lower Insertion Loss Lower distortion through attenuation Larger dynamic range for wide spread spectrum applications 7 8 Center Paddle is RF and D.C. Ground Note: RF Input & RF Output Ports are Functionall...