MA4VAT2004-1061T

www.DataSheet4U.com High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz Features RoHs and ELV compliant 1.4 dB Insertion Loss, Typical 1.4:1 VSWR, Typical 21 dB Attenuation, Typical 45 dBm IIP3, Typical (1 MHz Offset, @ + 0 dBm Pinc) 0 – 1.66 Volts Control Voltage @ 1.50 mA Typical MA4VAT2004-1061T V2 PIN Configuration (Topview) Extra Features Covers the following Bands: DCS PCS UMTS/WCDMA/CDMA TD-S_CDMA SCDMA Usable Bandwidth: 1.50 GHz to 2.50 GHz 1.8 dB Insertion Loss, Typical 2:1 VSWR, Typical 18.5 dB Attenuation, Typical PIN Configuration (Topview) PIN 1 2 Function DC1 GND GND RFin/out RFout/in GND GND DC2 Symetrical as RF Input/Ouput Symetrical as RF Input/Ouput Comments Description and Applications M/A-COM’s MA4VAT2004-1061T is a HMIC PIN Diode Variable Attenuator which utilizes an integrated 90 degree 3dB hybrid with a pair of Silicon PIN Diodes to perform the required attenuation function as D.C. Voltage (Current) is applied. This device operates from 0 to 1.66 Volts at 1.50mA typical control current for maximum attenuation. The user can add external biasing resistors to the bias ports for higher voltage requirements as required. M/A-COM’s MA4VAT2004-1061T PIN Diode Variable Attenuator is designed for AGC Circuit Applications requiring: Lower Insertion Loss Lower distortion through attenuation Large dynamic range for wide spread spectrum applications 3 4 5 6 7 8 Absolute Maximum Ratings1,2 @ T = +25 °C Parameter Operating...