EFFICIENCY SERIES. 120LQ045 Datasheet

120LQ045 SERIES. Datasheet pdf. Equivalent

Part 120LQ045
Description SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES
Feature www.DataSheet4U.com PD - 91858 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 120LQ045 120 Amp, 45V M.
Manufacture International Rectifier
Datasheet
Download 120LQ045 Datasheet



120LQ045
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PD - 91858
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
120LQ045
120 Amp, 45V
Major Ratings and Characteristics
Characteristics
IF(AV)
120LQ045
120
VRRM
IFSM @ tp = 8.3ms half-sine
VF @ 120Apk, TJ =125°C
45
800
1.07
TJ,TstgOperating and storage -55 to 150
Units
A
V
A
V
°C
Description/Features
The 120LQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-1 ceramic package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Surface Mount
Lightweight
CASE STYLE
www.irf.com
IR Case Style SMD-1
CATHODEANODEANODE
1
03/29/01



120LQ045
120LQ045
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
120LQ045
45
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
Limits Units
Conditions
120 A 50% duty cycle @ TC = 64°C, square waveform
800 A @ tp = 8.3 ms half-sine
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
See Fig. 1Q
IRM Max. Reverse Leakage Current
See Fig. 2Q
CT Max. Junction Capacitance
L S Typical Series Inductance
Limits
0.73
0.91
1.25
0.57
0.71
0.99
0.51
0.70
1.07
8.0
14
75
Units
V
V
V
V
V
V
V
V
V
mA
mA
mA
Conditions
@ 30A
@ 60A
@ 120A
TJ = -55°C R
@ 30A
@ 60A
@ 120A
TJ = 25°CR
@ 30A
@ 60A
@ 120A
TJ = 125°C R
TJ = 25°C
TJ = 100°C
TJ = 125°C
VR = rated VR R
4500
5.9
pF VR = 5VDC ( 1MHz, 25°C ) R
nH Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
TJ Max.Junction Temperature Range
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance, Junction
to Case
wt Weight (Typical)
Die Size (Typical)
Case Style
Limits Units
-55 to 150 °C
-55 to 150 °C
0.8 °C/W
DC operation
2.6 g
275X275 mils
SMD-1
Q Pulse Width < 300µs, Duty Cycle < 2%
R Pins 2 and 3 externally tied together
Conditions
See Fig. 4
2 www.irf.com







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