2SD2600 Darlington Transistor Datasheet

2SD2600 Datasheet, PDF, Equivalent


Part Number

2SD2600

Description

NPN Triple Diffused Planar Silicon Darlington Transistor

Manufacture

Sanyo Semicon Device

Total Page 3 Pages
Datasheet
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2SD2600
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Ordering number : EN8564
2SD2600
SANYO Semiconductors
DATA SHEET
2SD2600
NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
Applications
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
High DC current gain.
Large current capacity and wide ASO.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
ton
tstg
tf
VCB=80V, IE=0A
VEB=5V, IC=0A
VCE=3V, IC=4A
VCE=5V, IC=4A
IC=4A, IB=8mA
IC=4A, IB=8mA
IC=5mA, IE=0A
IC=50mA, RBE=
See specified test circuit.
See specified test circuit.
See specified test circuit.
Ratings
110
100
6
8
12
35
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Ratings
min typ
1500
110
100
4000
20
0.9
0.6
4.8
1.6
max
0.1
3.0
Unit
mA
mA
MHz
1.5 V
2.0 V
V
V
µs
µs
µs
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73106IA MS IM TA-1084 No.8564-1/3

2SD2600
Package Dimensions
unit : mm (typ)
7002-003
8.2
7.8
6.2
3
12
1.0
2.54
5.08
1.0
2.54
10.0
6.0
2SD2600
Switching Time Test Circuit
0.6
0.3
0.6
1 : Base
7.8 2 : Emitter
3 : Collector
SANYO : ZP
PW=50µs
DC1%
INPUT
IB2
IB1
RB
50VR
+
100µF
VBE= --5V
500IB1= --500IB2=IC=4A
OUTPUT
TUT
RL
12.5
+
470µF
VCC=50V
Electrical Connection
C
B
6k200
E
10
From top
20mA
18mA
8 16mA
14mA
12mA
10mA
6 8mA
6mA
4
IC -- VCE
4mA
2mA
2
0 IB=0mA
0 12345
Collector-to-Emitter Voltage, VCE -- V IT03402
IC -- VBE
8
VCE=3V
6
4
2
0
0.4 0.8 1.2 1.6 2.0 2.4
Base-to-Emitter Voltage, VBE -- V IT03404
8
From top
2000µA
1800µA
1600µA
6 1400µA
1200µA
4
IC -- VCE
1000µA
800µA
600µA
2
0
0
2
10000
7
5
3
2
1000
7
5
3
2
400µA
200µA
IB=0µA
12345
Collector-to-Emitter Voltage, VCE -- V IT03403
hFE -- IC
Ta=120°C
VCE=3V
25°C
--40°C
100
7
5
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03405
No.8564-2/3


Features www.DataSheet4U.com Ordering number : E N8564 2SD2600 SANYO Semiconductors D ATA SHEET 2SD2600 Applications • NP N Triple Diffused Planar Silicon Darlin gton Transistor Driver Applications M otor drivers, printer hammer drivers, r elay drivers, voltage regulator control . Features • • High DC current ga in. Large current capacity and wide ASO . Specifications Absolute Maximum Rati ngs at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Volta ge Emitter-to-Base Voltage Collector Cu rrent Collector Current (Pulse) Collect or Dissipation Junction Temperature Sto rage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions R atings 110 100 6 8 12 35 150 --55 to +1 50 Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturatio n Voltage Base-to-Emitter Saturation Vo ltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown V.
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