Amplifier IC. MAAM-007219 Datasheet

MAAM-007219 IC. Datasheet pdf. Equivalent

Part MAAM-007219
Description DECT RF Power Amplifier IC
Feature www.DataSheet4U.com RoHS Compliant MAAM-007219 V1 Functional Schematic N/C +VDD1 GND GND RFIN GND G.
Manufacture Tyco Electronics
Datasheet
Download MAAM-007219 Datasheet




MAAM-007219
www.DataSheet4U.com
3.6 V, 450 mW DECT RF Power Amplifier IC
1880 - 1900 MHz
RoHS
Compliant
MAAM-007219
V1
Features
Ideal for DECT Applications
Output Power: +26.5 dBm
Power Gain: 24.5 dB
Single Positive Supply
Class A Bias
No External RF Matching Required
Lead-Free SOIC-16 Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
260°C Reflow Compatible
RoHS* Compliant version of MA02203AD
Description
The MAAM-007219 is a two stage power amplifier
designed for DECT applications to have an output
power of +26.5 dBm with an input power of 2.0
dBm. This power amplifier operates at +3.6 volts
with 35% typical power added efficiency. The
MAAM-007219 is mounted in a narrow body lead-
free 16-pin SOIC plastic package.
The MAAM-007219 is fabricated using M/A-COM’s
self-aligned MSAG®-Lite MESFET process for a
low single supply voltage, high power efficiency,
and excellent reliability.
Ordering Information 1
Part Number
Description
MAAM-007219-000000
MAAM-007219-TR3000
Bulk Packaging
13 inch, 3000 piece reel
1. Reference Application Note M513 for reel size information.
Absolute Maximum Ratings 2,3
Parameter
Absolute Maximum
Input Power
+6 dBm
Operating Voltages
+5.5 volts
Operating Temperature, Ts
-40°C to +75°C
Channel Temperature
+150°C
Storage Temperature
-40°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
Functional Schematic
N/C N/C
+VDD1
+VDD2
GND GND
GND GND
RFIN
GND
RFOUT
GND
GND GND
N/C N/C
16 pin narrow body SOIC
Pin Configuration
Pin Function
Description
1 N/C
No Connection
2 VDD1
3 GND
First Stage Supply Voltage
Ground
4 GND
Ground
5 RFIN
6 GND
RF Input
Ground
7 GND
Ground
8 N/C
No Connection
9 N/C
No Connection
10 GND
Ground
11 GND
Ground
12 RFOUT
13 GND
RF Output
Ground
14 GND
Ground
15
VDD2
Second Stage Supply Voltage
16 N/C
No Connection
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.



MAAM-007219
3.6 V, 450 mW DECT RF Power Amplifier IC
1880 - 1900 MHz
RoHS
Compliant
MAAM-007219
V1
Electrical Specifications: TS = 40 °C 4, VDD = +3.6 V, F = 1880 MHz, PIN = +2 dBm, Z0 = 50
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Output Power
dBm
25.5
26.5
27.5
Pout Frequency Dependency
dB — 0.2 —
Power Gain
dB — 24.5 —
Current Consumption
mA — 350 420
Input VSWR, PA On
-
1.6:1
2.0:1
Input VSWR, PA Off
Isolation, PA Off
2nd Harmonics
3rd Harmonics
VDD1, VDD2 = 0 V
VDD1, VDD2 = 0 V
- — 1.4:1 —
dB — 40 —
dBc — -31 —
dBc — -55 —
Thermal Resistance
Junction of 2nd stage FET to pin 11, Duty Cycle=50%
oC/W
63 —
Load Mismatch
Stability
VDD = 4.6 V, VSWR = 10:1, PIN = 7 dBm
PIN = -3 to +7 dBm, VDD = 0 - 4.6 V, POUT = 0 mW to 450 mW,
TS = -40 to +75 °C, Load VSWR = 10:1
-
-
No degradation
All spurs < -60 dBc
4. Ts is the temperature measured at the soldering point of pin 11.
Application Schematic
+VDD
L1
C1
C2 L2
RF INPUT
N/C 1
2
3
4
5
6
7
N/C 8
16 N/C
15
14
13
12
11
10
9 N/C
RF OUTPUT
60mil GETEK Board
Component List
Item
C1, C2
L1
L2
Description
P/N
100 pF DLI multilayer ceramic C11AH101K5TXL
chip capacitor
8.2 nH Coilcraft chip inductor 1008CT.080XKBB
27 nH Coilcraft chip inductor 1008CS.270XKBB
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.







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