MAAMGM0002

www.DataSheet4U.com Amplifier, Distributed, 0.1W 1.0-18.0 GHz Features ♦ 0.1 Watt Saturated Output Power Level ♦ 4 dB Typical Noise Figure ♦ MSAG™ Process 903216 — PRELIMINARY INFORMATION MAAMGM0002 Outline Drawing Description The MAAMGM0002 is a 0.1W Distributed Amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Test Equipment ♦ Electronic Warfare ♦ Radar Absolute Maximum 18.0 +12.0 -2.0 130 0.9 180 -55 to +150 Units dBm V V mA W °C °C Maximum Operating Conditions 1 Parameter Symbol PIN VDD VGG IDQ PDISS TJ TSTG Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 60% IDSS) Quiescent DC Power Dissipati...