www.DataSheet4U.com
RoHS Compliant
MAAMGM0002-DIE
Rev E
Amplifier, Distributed, 0.1W 1.0-18.0 GHz
Features
♦ ♦ ♦ ♦
0....
www.DataSheet4U.com
RoHS Compliant
MAAMGM0002-DIE
Rev E
Amplifier, Distributed, 0.1W 1.0-18.0 GHz
Features
♦ ♦ ♦ ♦
0.1 Watt Saturated Output Power Level 4 dB Typical Noise Figure Select-at-Test Biasing MSAG™ Process
Description
The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction SelfAligned Gate Process. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted
transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦ Test Equipment ♦ Electronic Warfare ♦ Radar
Also Available in:
Description Part Number Ceramic Package MAAMGM0002 Sample Board (Die) MAAMGM0002-DIE-SMB
SAMPLES
Sample Board (Packaged) MAAMGM0002-SMB
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, IDQ = 75 mA2, Pin = 13 dBm
Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal ...