MAAMGM0007-DIE

www.DataSheet4U.com Preliminary Datasheet RO-P-DS-3084 A 2.0-18.0 GHz Distributed Amp/Gain Block MAAMGM0007-DIE MAAMGM0007-DIE Features ♦ ♦ ♦ ♦ ♦ 0.15 Watt Saturated Output Power Level Single Bias Operation Variable Drain Voltage (4-6V) Operation GaAs MSAG™ Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAMGM0007-Die is a single stage distributed amplifier with single bias operation. This product is fully matched to 50 ohms on both the input and output. It can be used as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Test Equipment ♦ Electronic Warfare ♦ Radar Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, Pin = 16 dBm Parameter Bandwidth Output Power 1-dB Compression Point Small Signa...