MAAMGM0003-DIE

RO-P-DS-3046 - - www.DataSheet4U.com 0.4W Variable Distributed Amplifier 1.0 – 15.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ MAAMGM0003-DIE 1.0 - 15.0 GHz GaAs MMIC Amplifier 1.0 to 15.0 GHz Operation 0.4 Watt Saturated Output Power Level Variable Gain Control Select at Test Biasing Variable Drain Voltage (5-8V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ EW ♦ Radar Description The MAAMGM0003-Die is a 0.4W Distributed Amplifier with on-chip bias networks and variable gain control. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/ A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. This process features silicon oxyni- Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 7V, VGG = -2V, Pin = 20 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Output TOI Input VSWR Gate Current Drain Current 1. TB = MMIC Base Temperature Symbol f POUT PAE P1dB G OTOI VSWR IGG IDD Typical 1.0-15.0 26 11 25 7.5 39 2:1 <8 < 480 mA mA Units GHz dBm % dBm dB dBm RO-P-DS-3046 - - 2/7 0.4W Variable Distributed Amplifier Maximum Operating Conditions 1 Parameter Input Power Drain Voltage Gate Voltage, Primary Gate Voltage...