MAAPGM0018-DIE

RO-P-DS-3009 - - www.DataSheet4U.com 2W Ku-Band Power Amplifier 12.0-15.5 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ MAAPGM0018-DIE 12.0-15.5 GHz GaAs MMIC Amplifier 12.0-15.5 GHz Operation 2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Excellent Input and Output VSWR Self-Aligned MSAG® MESFET Process Primary Applications ♦ ♦ Point-to-Point Radio SatCom Description The MAAPGM0018-Die is a 3-stage 2 W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction SelfAligned Gate (MSAG®) MESFET Process. This process features silicon nitride passivation and polyimide scratch protection. Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR IGG IDD 2f 3f Typical 12.0-15.5 33 25 32 18 1.5:1 <5 < 1.2 -40 -55 mA A dBc dBc Units GHz dBm % dBm dB 1. TB = MMIC Base Temperature RO-P-DS-3009 - - 2/6 2W Ku-Band Power Amplifier Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supp...