MAAPGM0021-DIE

RO-P-DS-3012 - A www.DataSheet4U.com 2W C/X-Band Power Amplifier 4.5–9.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ MAAPGM0021-DIE 4.5-9.0 GHz GaAs MMIC Amplifier 4.5 to 9.0 GHz Operation 2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ ♦ ♦ Multiple Band Point-to-Point Radio SatCom ISM Band Description The MAAPGM0021-Die is a 2-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/ACOM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. This process provides polyimide scratch protection. Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 3rd Order Intermodulation Distortion Single Carrier Level = 23 dBm 5th Order Intermodulation Distortion Single Carrier Level = 23 dBm Symbol f POUT PAE P1dB G VSWR IGG IDD OTOI NF IM3 IM5 Typical 4.5-9.0 33 30 31 17 1.7:1 <2 < 750 41 9 31 41 mA mA dBm dB dBc dBc Units GHz dBm % dBm dB 1. TB = MMIC Base Temperature RO-P-D...