MAAPGM0038-DIE

RO-P-DS-3022 - - www.DataSheet4U.com 1.2W C/Ku-Band Power Amplifier 7.5-13.5 GHz Preliminary Information Features ♦ ♦ ♦ ♦ MAAPGM0038-DIE 7.5-13.5 GHz GaAs MMIC Amplifier 7.5-13.5 GHz Operation 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ Point-to-Point ♦ Weather Radar ♦ Airborne Radar Description The MAAPGM0038-Die is a 3-stage 1.2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/ A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. This process features silicon nitride passivation and polyimide scratch protection. Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, VGG = -2V, Pin = 20 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR IGG IDD OTOI NF 2f 3f Typical 7.5-13.5 31 21 29 19 4:1 < 12 < 1.1 40 8 -17 -34 mA A dBm dB dBc dBc Units GHz dBm % dBm dB 1. TB = MMIC Base Temperature RO-P-DS-3022 - - 2/6 1.2W C/Ku-Band Power Amplifier Maximum Operating Conditio...