MAAPGM0074-DIE

www.DataSheet4U.com Amplifier, Power, 8W 2.0-8.0 GHz Features ♦ ♦ ♦ ♦ MAAPGM0074-DIE Rev A Preliminary Datasheet 8 Watt Saturated Output Power Level 2-Octave Bandwidth Variable Drain Voltage (4-10V) Operation MSAG™ Process Description The MAAPGM0074-DIE is a 2-stage 8W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ ♦ ♦ ♦ SatCom Radio Communications Radar Electronic Warfare Also Available in: Description Part Number Ceramic Package MAAP-000074-PKG001 Sample Board (Die) MAAP-000074-SMB004 Sample Board (Pkg) MAAP-000074-SMB001 Mechanical Sample (Die) MAAP-000074-MCH000 Electrical Characteristics: T B = 30°C1, Z0 = 50 Ω , VDD = 10V, IDQ = 2...