MSA1022-CT1

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MSA1022–CT1/D PNP RF Amplifier Transistor Surface Mount COLLECTOR 3 MSA1022-CT1 Motorola Preferred Device 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCBO VCEO VEBO IC Value – 30 – 20 – 5.0 – 30 Unit Vdc Vdc Vdc mAdc CASE 318D–03, STYLE 1 SC–59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector Cutoff Current (VCB = –10 Vdc, IE = 0) Collector–Emitter Breakdown Voltage (VCE = – 20 Vdc, IB = 0) Emitter–Base Breakdown Voltage (VEB = – 5.0 Vdc, IC = 0) DC Current Gain(1) (VCE = –10 Vdc, IC = –1.0 mAdc) Current–Gain — Bandwidth Product (VCB = –10 Vdc, IE = 1.0 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol ICBO ICEO IEBO hFE fT Min — — — 110 150 Max – 0.1 –100 –10 220 — Unit µAdc µAdc µAdc — MHz DEVICE MARKING Marking Symbol ECX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces MSA1022–BT1/D) © Motorola, Inc. 1996 Motorola Small–Signal Transistors, FETs and Di...