Surface Mount. MSA1022-CT1 Datasheet
www.DSatEaSMhIeCetO4UN.cDoUmCTOR TECHNICAL DATA
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PNP RF Amplifier Transistor
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Collector Current — Continuous
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
Collector–Emitter Breakdown Voltage
(VCE = – 20 Vdc, IB = 0)
Emitter–Base Breakdown Voltage
(VEB = – 5.0 Vdc, IC = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = –1.0 mAdc)
Current–Gain — Bandwidth Product
(VCB = –10 Vdc, IE = 1.0 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
– 55 ~ +150
CASE 318D–03, STYLE 1
Min Max Unit
— –10 µAdc
110 220 —
150 — MHz
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the pad
size. This can vary from the minimum pad size for soldering
to the pad size given for maximum power dissipation. Power
dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
RθJA, the thermal resistance from the device junction to
ambient; and the operating temperature, TA. Using the
values provided on the data sheet, PD can be calculated as
TJ(max) – TA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
150°C – 25°C
PD = 625°C/W = 200 milliwatts
The 625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad™. Using a board material such as
Thermal Clad, a power dissipation of 400 milliwatts can be
achieved using the same footprint.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data