MSA1162GT1

www.DataSheet4U.com MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount Moisture Sensitivity Level: 1 ESD Rating: TBD MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc 2 BASE 1 EMITTER http://onsemi.com COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 −55 to +150 Unit mW °C °C 2 1 MARKING DIAGRAM 3 62x M SC−59 CASE 318D STYLE 1 62 x M = Specific Device Code = G or Y = Date Code ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162 YT1 MSA1162GT1 Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Current −Gain − Bandwidth Product (IC = 1 mA, VCE = 10.0 V, f = 10 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO − − − hFE 120 200 VCE(sat) fT 80 − − 240 400 0.5 Vdc MHz 0.1 ...