Amplifier Transistors. MSA1162GT1 Datasheet

MSA1162GT1 Transistors. Datasheet pdf. Equivalent

Part MSA1162GT1
Description (MSA1162GT1 / MSA1162YT1) General Purpose Amplifier Transistors
Feature www.DataSheet4U.com MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount .
Manufacture ON Semiconductor
Total Page 4 Pages
Datasheet
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MSA1162GT1
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MSA1162GT1, MSA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
Moisture Sensitivity Level: 1
ESD Rating: TBD
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
60
50
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
PD
TJ
Tstg
Max
200
150
−55 to
+150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
noted)
Characteristic
Symbol Min Max Unit
Collector−Emitter Breakdown Voltage (IC V(BR)CEO 50 − Vdc
= 2.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage (IC = V(BR)CBO 60 − Vdc
10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage (IE =
10 mAdc, IC = 0)
V(BR)EBO 7.0 −
Vdc
Collector−Base Cutoff Current (VCB = 45
Vdc, IE = 0)
ICBO
− 0.1 mAdc
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
− 0.1 mAdc
− 2.0 mAdc
− 1.0 mAdc
DC Current Gain (Note 1)
hFE
(VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162
120 240
YT1 200 400
MSA1162GT1
Collector−Emitter Saturation Voltage (IC VCE(sat) − 0.5 Vdc
= 100 mAdc, IB = 10 mAdc)
Current −Gain − Bandwidth Product
(IC = 1 mA, VCE = 10.0 V, f = 10 MHz)
fT
MHz
80 −
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
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COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
62x M
62 = Specific Device Code
x = G or Y
M = Date Code
ORDERING INFORMATION
Device {
Package
Shipping
MSA1162GT1
SC−59
3000/Tape & Reel
MSA1162YT1
SC−59
3000/Tape & Reel
†The “T1” suffix refers to a 7 inch reel.
© Semiconductor Components Industries, LLC, 2003
September, 2003 − Rev. 4
1
Publication Order Number:
MSA1162GT1/D



MSA1162GT1
MSA1162GT1, MSA1162YT1
INFORMATION FOR USING THE SC−59 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.039
1.0
0.094
2.4
0.031
0.8
inches
mm
SC−59 POWER DISSIPATION
The power dissipation of the SC−59 is a function of the
pad size. This can vary from the minimum pad size for sol-
dering to the pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by TJ(max), the maximum rated junction temperature
of the die, RqJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA. Us-
ing the values provided on the data sheet, PD can be calcu-
lated as follows.
PD =
TJ(max) − TA
RqJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one
can calculate the power dissipation of the device which in
this case is 338 milliwatts.
PD =
150°C − 25°C
370°C/W
= 338 milliwatts
The 370°C/W assumes the use of the recommended foot-
print on a glass epoxy printed circuit board to achieve a
power dissipation of 338 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, the power dissipation can be doubled us-
ing the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are sub-
jected.
Always preheat the device.
The delta temperature between the preheat and solder-
ing should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum tem-
perature ratings as shown on the data sheet. When us-
ing infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the maxi-
mum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and re-
sult in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied dur-
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
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