Schottky rectifier. STPS15H100C Datasheet

STPS15H100C rectifier. Datasheet pdf. Equivalent

Part STPS15H100C
Description High voltage power Schottky rectifier
Feature www.DataSheet4U.com STPS15H100C High voltage power Schottky rectifier Main product characteristics .
Manufacture STMicroelectronics
Total Page 8 Pages
Datasheet
Download STPS15H100C Datasheet



STPS15H100C
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STPS15H100C
High voltage power Schottky rectifier
Main product characteristics
A1
IF(AV)
VRRM
Tj (max)
VF(max)
2 x 7.5 A
100 V
175° C
0.67 V
Features and Benefits
Negligible switching losses
Low leakage current
Good trade off between leakage current and
forward voltage drop
Low thermal resistance
Avalanche capability specified
Description
Dual center tab Schottky rectifier suited for
switched mode power supply and high frequency
DC to DC converters.
Packaged in DPAK and IPAK, this device is
intended for use in high frequency inverters.
A2
K
A2
A1
STPS15H100CB
DPAK
Table 1. Absolute Ratings (limiting values, per diode)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tc = 135° C
δ = 0.5
Per diode
Per device
IFSM
IRRM
PARM
Tstg
Tj
dV/dt
Surge non repetitive forward current
tp = 10 ms sinusoidal
Peak repetitive reverse current
tp = 2 µs square F= 1 kHz
Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
Storage temperature range
Maximum operating junction temperature (1)
Critical rate of rise of reverse voltage
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j-------a----)
condition to avoid thermal runaway for a diode on its own heatsink
K
K
A2
K
A1
STPS15H100CH
IPAK
Value
100
10
7.5
15
75
1
6600
-65 to + 175
175
10000
Unit
V
A
A
A
A
W
°C
°C
V/µs
June 2006
Rev 4
1/8
www.st.com
8



STPS15H100C
Characteristics
1 Characteristics
STPS15H100C
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rth(j-c) Junction to case
Per diode
Total
Rth(c) Coupling
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
4
2.4 °C/W
0.7
Table 3.
Symbol
Static electrical characteristics (per diode)
Parameter
Test Conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
Tj = 25° C
IF = 7.5 A
Tj = 125° C IF = 7.5 A
VF(1.) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
IF = 12 A
IF = 12 A
IF = 15 A
Tj = 125° C IF = 15 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.58 x IF(AV) + 0.012 IF2(RMS)
3 µA
1.3 4 mA
0.8
0.62 0.67
0.85
0.68 0.73
V
0.89
0.71 0.76
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