Gain Block. EC1019B Datasheet

EC1019B Block. Datasheet pdf. Equivalent

Part EC1019B
Description InGaP HBT Gain Block
Feature www.DataSheet4U.com EC1019B InGaP HBT Gain Block Product Features DC – 4 GHz +19.5 dBm P1dB at 2 .
Manufacture WJ Communication
Datasheet
Download EC1019B Datasheet



EC1019B
EC1019Bwww.DataSheet4U.com
InGaP HBT Gain Block
Product Features
DC – 4 GHz
+19.5 dBm P1dB at 2 GHz
+31 dBm OIP3 at 2 GHz
18.5 dB Gain at 2 GHz
2.8 dB Noise Figure
Available in Lead-free / green
SOT-89 Package Style
Internally matched to 50
Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
RFID
WiMAX / WiBro
Product Description
Functional Diagram
The EC1019B is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
GND
4
package. At 2000 MHz, the EC1019B typically provides
18.5 dB of gain, +31 dBm Output IP3, and +19.5 dBm P1dB.
The EC1019B consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation. The device is
ideal for wireless applications and is available in low-cost,
surface-mountable plastic lead-free/green/RoHS-compliant
SOT-89 packages. A SOT-86 version is also available as
the EC1019C. All devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the EC1019B will work for other various applications
within the DC to 4 GHz frequency range such as CATV
and mobile wireless.
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications (1)
Typical Performance (1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
DC
16.5
+14.5
4.2
Typ
2000
18.4
16.5
10.5
+19.5
+31
2.9
4.7
70
Max
4000
20.5
5.2
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +6V, Rbias = 16.5, 50syystem.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
20.9
-21.5
-17.3
+19
+34
2.5
Typical
900 1900
20.4 18.5
-19.2 -16.6
-15.1 -10.6
+19 +19.5
+34 +31
2.6 2.8
2140
18.2
-16.9
-10.2
+19
+31
2.9
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Device Current
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85 °C
-55 to +150 °C
130 mA
+12 dBm
+250 °C
Ordering Information
Part No.
EC1019B-G
EC1019B-PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
700 – 2400 MHz Fully Assembled Eval. Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 4 April 2007



EC1019B
EC1019Bwww.DataSheet4U.com
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, Rbias = 15 , Icc = 70 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
21.2
-23.7
-19.0
+19.4
+33
2.9
500
20.9
-21.5
-17.3
+19.4
+33.2
2.5
900
20.4
-19.2
-15.1
+19.4
+33.6
2.6
1900
18.5
-16.6
-10.6
+19.5
+31
2.8
2140
18.2
-16.9
-10.2
+19.0
+31
2.9
2400
17.6
-18.2
-10.2
+18.8
+30.7
3500
15.6
-11.2
-8.1
+16.2
5800
11.3
-9.5
-6.2
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 4.7 V, Rbias = 16.5 , Icc = 70 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
25
20
15
10
5
0
0
40
35
30
25
20
500
S21 vs. Frequency
+25 °C
123
Frequency (GHz)
4
OIP3 vs. Frequency
25°C 85°C -40°C
1000 1500 2000 2500 3000
Frequency (MHz)
0
-5
-10
-15
-20
-25
0
5
4
3
2
1
0
0
S11, S22vs. Frequency
S22
S11
123
Frequency (GHz)
NoiseFigurevs. Frequency
Icc vs. Vde
160
120
80
40
25°C
0
4 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0
Vde (V)
P1dBvs. Frequency
24
20
16
NF
500 1000 1500 2000
Frequency (MHz)
2500 12
500
25°C 85°C -40°C
1000 1500 2000 2500
Frequency (MHz)
3000
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 2 of 4 April 2007





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)