Down Converter. MAIA-007495-000100 Datasheet

MAIA-007495-000100 Converter. Datasheet pdf. Equivalent

Part MAIA-007495-000100
Description Down Converter
Feature www.DataSheet4U.com RoHS Compliant MAIA-007495-000100 V1 Down Converter 1500 — 2400 MHz Features •.
Manufacture Tyco Electronics
Total Page 5 Pages
Datasheet
Download MAIA-007495-000100 Datasheet



MAIA-007495-000100
www.DataSheet4U.com
Down Converter
1500 — 2400 MHz
RoHS
Compliant
MAIA-007495-000100
V1
Features
LNA Mixer integration
Typical conversion gain of 7 dB
Typical Two-Tone IM Ratio of 50 dBm
LO Drive-Level: +13 dBm
Low Cost / High Performance
50 ohm Nominal Impedance
Lead-Free QSOP-16 Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
260°C Reflow Compatible
RoHS* Compliant Version of SA65-0003
Description
M/A-COM’s MAIA-007495-000100 is an integrated
assembly containing a GaAs FET MMIC LNA and
GaAs FET mixer. This device is packaged in a 16
leaded QSOP plastic surface mount package. The
amplifier can be biased with either +3V or +5V, the
mixer requires no DC bias. The conversion gain of
the integrated combination is typically 6 dB at +3V
bias and 8 dB at +5V bias. The SA65-0003 is ideally
suited for RF/IF communications applications
requiring down conversion with some gain.
This MCM contains a mixer that is fabricated using a
mature 1-micron GaAs process, it also contains an
LNA that is fabricated using a low cost mature 0.5-
micron gate length GaAs MESFET process. Both die
feature full passivation for increased performance
and reliability.
Ordering Information
Part Number
MAIA-007495-000100
MAIA-007495-0001TR
MAIA-007495-0001TB
Package
Bulk Packaging
1000 piece reel
Sample Test Board
Note: Reference Application Note M513 for reel size
information.
Note: Die quantity varies.
Functional Block Diagram
1. See “External Circuiting Parts” on Sheet 3 for the values of
the external components.
Pin Configuration
Pin # Function
Description
1 GND
RF and DC Ground
2
RES
External current control (optional)
3 GND
RF and DC Ground
4 RF IN
RF Input of the amplifier
5 GND
RF and DC Ground
6 LO
LO port of the mixer
7 GND
RF and DC Ground
8 IF
IF port of the mixer
9 RF GND
RF and DC Ground
10 GND
11 RF 2
RF and DC Ground
RF port of the mixer
12 GND
13 RF OUT 2
RF and DC Ground
RF output of the amplifier
14 GND
RF and DC Ground
15 VDD
16 GND
Positive supply voltage
RF and DC Ground
2. The output port of the amplifier, RFOUT, and the input port
of the mixer, RF, are adjacently placed so that an external
filter can be used.
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
North America Tel: 800.366.2266 / Fax: 978.366.2266
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.



MAIA-007495-000100
Down Converter
1500 — 2400 MHz
RoHS
Compliant
MAIA-007495-000100
V1
Electrical Specifications: TA = +25°C, Z0=50 Ohms, RF = -10 dBm3,
LO = +13 dBm, IDD 45 mA
Parameter
Conversion Gain 8,9
Isolation 6
Reverse Isolation7
VSWR
Input IP3 3,4,5
Test Conditions3
LNA +3V
LNA +5V
LO to RF IN
LO to IF
LNA +3V
LO
RF IN
IF
LNA +3V
LNA +5V
Units
dB
dB
dB
dB
dB
Ratio
Ratio
Ratio
dBm
dBm
Min
3.1
4.6
29
19
30
13
21
Typ
6.0
8.0
32
23
40
1.4:1
1.9:1
1.9:1
17.5
25
3. For IP3 measurements, RFIN = -24 dBm, this low RF IN level gets amplified through the LNA.
4. For IP3 measurements, RFIN2 = RFIN1 + 10 MHz, LO = RFIN1—140 MHz.
5. For IP3 measurements, IP3 = IMR/2 + PIN.
6. RF IN to IF Isolation is typically 0 dB.
7. Reverse Isolation is measured from IF to RFIN with the IF at –10 dBm, LO at +13 dBm.
8. The amplifier has a normal gain of 12.5 dB, 3V bias and 14.0 dB, 5V bias. Amplifier typical Noise Figure = 1.5 dB.
9. NFT = NF1 + (NF2 - 1)/G1
Max
6.6
8.8
2.5:1
2.1:1
Absolute Maximum Ratings 10,11
Parameter
RF Input Power 12
LO Drive Power 12
VDD
Current 13
Channel Temperature 14
Operating Temperature
Storage Temperature
Absolute Maximum
+17 dBm
+23 dBm
+10 VDC
80 mA
+150°C
-40°C to +85°C
-65°C to +150°C
10.Exceeding any one or combination of these limits may cause
permanent damage to this device.
11.M/A-COM does not recommend sustained operation near
these survivability limits.
12.Total power for RF and LO ports should not exceed +23 dBm.
13.When pin #2 is used to increase current—see note 8 above.
14.Thermal resistance (θjc) = +95°C/W.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)