www.DataSheet4U.com
3.5-6.0 GHz Phase Shifter
MAPCGM0002-DIE
RO-P-DS-3050 A Preliminary Information
Features
♦ ♦ ♦ ♦...
www.DataSheet4U.com
3.5-6.0 GHz Phase Shifter
MAPCGM0002-DIE
RO-P-DS-3050 A Preliminary Information
Features
♦ ♦ ♦ ♦
6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs MSAG™ Process
Description
The MAPCGM0002-Die is a 6-bit Phase Shifter with Parallel TTL Input Control. This product is fully matched to 50 ohms on both the input and output. The part has 360º of phase coverage with LSB of 5.6º. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted
transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦ Satellite Communication ♦ Phased Array Radar
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VEE = -5V
Parameter Bandwidth Insertion Loss, Reference State Input VSWR, All States Output VSWR, All States RMS Phase Error RMS Phase Error, Calibrated Peak to Peak Gain Variation, All States Current Input Third Order Intercept Input 1-dB Compression Point 1. TB = MMIC Base Temperature 1
M/A-COM ...