MAPL-000817-015CPC

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 7/27/06 Preliminary MAPL-000817-015CPC Features Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz, 26Vdc, CW Typical Power Output: 16.5W Gain: 17.0dB Efficiency: 50% 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz Package Style MAPL-000817-015CPC Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.25 -65 to +150 150 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 4 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 µAdc) Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = ...