Effect Transistor. MAPLST0810-030CF Datasheet

MAPLST0810-030CF Transistor. Datasheet pdf. Equivalent

Part MAPLST0810-030CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V 5/14/04 Preli.
Manufacture Tyco Electronics
Datasheet
Download MAPLST0810-030CF Datasheet



MAPLST0810-030CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 865 — 960 MHz, 30W, 26V
5/14/04
Preliminary
Features
Package Style
Q Designed for 865 to 960 MHz Broadband
Commercial and Base Station
Applications.
Q Typical CW RF Performance at 960MHz,
26VDC:
Q POUT: 30W (P1dB)
Q Gain: 18dB
Q Efficiency: 50%
Q Ruggedness: 10:1 VSWR @ 30W CW,
26V, 925MHz
Q High Gain, High Efficiency and High
Linearity
Q Excellent Thermal Stability
P-239
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
97
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.



MAPLST0810-030CF
RF Power LDMOS Transistor, 865-960 MHz, 30W, 26V
MAPLST0810-030CF
5/14/04
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µAdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µA)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300 mA)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W)
Drain Efficiency
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W)
Input Return Loss
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W)
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Symbol Min
Typ
Max
Unit
V(BR)DSS
65
IDSS
IGSS
VGS(th)
2
VDS(Q)
VDS(on)
Gm
4.0
0.20
2.0
— Vdc
1 µAdc
3 µAdc
4 Vdc
— Vdc
— Vdc
—S
Ciss — 50 — pF
Coss
32
pF
Crss — 1.4 — pF
GP — 18 — dB
EFF (ŋ) — 50 — %
IRL — 12 — dB
Ψ No Degradation In Output Power
Before and After Test
2





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