Effect Transistor. MAPLST0822-002PP Datasheet

MAPLST0822-002PP Transistor. Datasheet pdf. Equivalent

Part MAPLST0822-002PP
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 Prelimi.
Manufacture Tyco Electronics
Datasheet
Download MAPLST0822-002PP Datasheet



MAPLST0822-002PP
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 800—2200 MHz, 2W, 28V
4/14/05
Preliminary
Features
Package Style
Designed for broadband commercial
applications up to 2.2GHz
High Gain, High Efficiency and High
Linearity
Ease of Design for Gain and Insertion Phase
Flatness
Excellent Thermal Stability
W-CDMA Performance at 2.17GHz, 28Vdc
Average Output Power: 28dBm @ -39dBc
ACPR
Gain: 14.5dB (typ.)
Efficiency: 23% (typ.)
10:1 VSWR Ruggedness at 2W (CW), 28V,
2.11GHz
Performance at 960MHz, 26Vdc, P1dB
Average Output Power: 2W min.
Gain: 20dB (typ.)
Efficiency: 50% (typ.)
10:1 VSWR Ruggedness at 2W, 26V,
960MHz
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
PFP-16
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
+15, -0.5
6.9
-65 to +150
150
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
18
Units
Vdc
Vdc
W
°C
°C
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.



MAPLST0822-002PP
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 30 µAdc)
Gate Threshold Voltage
(Vds = 26 Vdc, Id = 25 mA)
Gate Quiescent Voltage
(Vds = 26 Vdc, Id = 25 mA)
Drain-Source On-Voltage
(Vgs = 10 Vdc, Id = 0.1 A)
MAPLST0822-002PP
4/14/05
Preliminary
Symbol Min Typ Max Unit
V(BR)DSS
65
— Vdc
VGS(th)
2
5 Vdc
VGS(Q)
3
5 Vdc
VDS(on)
0.30
Vdc
2





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