MAPLST1617-030CF

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 Preliminary MAPLST1617-030CF Features Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance (IMD=-30 dBc): Average Output Power: 15W Gain: 14dB (typ.) Efficiency: 38% (typ.) 10:1 VSWR Ruggedness at 30W, 28V, 1670MHz) Package Style MAPLST1617-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.8 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1600— 1700 MHz, 30W, 28V MAPLST1617-030CF 5/5/05 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage (V GS = 0 Vdc, ID = 20 µAdc) OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS 65 Vdc, VGS DS = 28 GS = 0) Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current Vdc, VV 0) (V DS = = =5 26 Vdc, 0) (VGS = DS GS Symbol Min Typ Max Unit Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min 65 — — — — — 2 2 — — Typ — — — — — — — — 0.2 1.2 Max — 101 11 1 4 Unit Vdc µAdc µAdc µAdc µAdc Vdc µA...