Effect Transistor. MAPLST1617-030CF Datasheet

MAPLST1617-030CF Transistor. Datasheet pdf. Equivalent

Part MAPLST1617-030CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 Prel.
Manufacture Tyco Electronics
Datasheet
Download MAPLST1617-030CF Datasheet



MAPLST1617-030CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 1600 — 1700 MHz, 30W, 28V
5/5/05
Preliminary
Features
Designed for INMARSAT applications in the
1620-1670 MHz frequency band.
Typical Two Tone Performance
(IMD=-30 dBc):
Average Output Power: 15W
Gain: 14dB (typ.)
Efficiency: 38% (typ.)
10:1 VSWR Ruggedness at 30W, 28V,
1670MHz)
Package Style
MAPLST1617-030CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
97
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.



MAPLST1617-030CF
RF Power LDMOS Transistor, 1600— 1700 MHz, 30W, 28V
MAPLST1617-030CF
5/5/05
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown VoCltahgaeracteristic
OFF(VCGHSA=R0AVCdTcE, RIDIS=T2I0CSµAdc)
Zero Gate Voltage Drain Leakage Current
(VDDSS = 2685 Vdc, VGGSS = 0)
GZeartoe((V—VGGDSaSStoe==uV52rc6oVeltVdaLcdge,ceaV,kDVDaSrGgaS=ein=0CL)0ue)rareknatge Current
GGaattee((VV—TDGhSSSroe==us15hrc0oVelVddLdcVec,ao,VklItDDaaSgg==ee10Cm)uArr)ent
Gate Quiescent Voltage
ON (CVHDSA=RA28CTVEdcR,ISIDT=IC2S50 mA)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
IDnpYuNt CAaMpaIcCitaCncHeA(InRcAluCdinTgEIRnpIuStTMICatSch(in1g) Capacitor in Package)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
RFeUvNerCseTTIOraNnsAfeLr CTaEpaScTitSan(cIen M/A-COM Test Fixture) (2)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
CW Gain
(VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz)
CW Drain Efficiency
(VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz)
Symbol Min
SyVm(BbR)oDlSS Mi6n5
IDSIDSSS
——
IDSIGSSS
IGVSGSS(th)
VDS(Q)
——
—2
2
VDS(on)
Gm —
Ciss
Coss
Crss
Gps
EFF (ŋ) —
Typ Max Unit
Typ
Max
UnVidt c
——
——
——
0.2
1.2
101 µAµdAcdc
1 1 µAµdAcdc
1 4 µAVddcc
4.5 Vdc
— Vdc
—S
90 —
32.5 —
1.5 —
pF
pF
pF
14 — dB
50 — %
CW Input Return Loss
(VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz)
IRL — -10 -9 dB
IMD IMD — -30 — dBc
(VDS = 28 Vdc, POUT = 15 W (avg.) (30 W PEP), IDQ = 250 mA, f0 =
1670 MHz, f1 = 1670.1 MHz)
Output VSWR Tolerance
(VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz)
Ψ No Degradation In Output Power
Before and After Test
2





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