Effect Transistor. MAPLST1820-030CF Datasheet

MAPLST1820-030CF Transistor. Datasheet pdf. Equivalent

Part MAPLST1820-030CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 Pre.
Manufacture Tyco Electronics
Datasheet
Download MAPLST1820-030CF Datasheet



MAPLST1820-030CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 1800 — 2000 MHz, 30W, 26V
5/14/04
Preliminary
Features
Package Style
Designed for base station applications in the
1805-1880MHz or 1930-1990MHz Frequency
Band. Suitable for GSM, EDGE, TDMA,
CDMA, and multi-carrier amplifier
applications
Q 30W CW Output Power at P1dB
Q 13dB Gain at P1dB
Q 45% Drain Efficiency at P1dB
Q 10:1 VSWR Ruggedness (CW @ 30W,
26V, 1900MHz)
Q Internal input and output matching
P-237
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Drain Current — Continuous
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID
PD
TSTG
TJ
Rating
65
20
10
97
-40 to +150
+200
Units
Vdc
Vdc
Adc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.



MAPLST1820-030CF
RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V
MAPLST1820-030CF
5/14/04
Preliminary
Characteristic
Symbol Min Typ Max Unit
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown VoClthaagreacteristic
OFF(VCGHSA=R0AVCdTcE,RIDIS=T2IC0SµAdc)
Zero Gate Voltage Drain Leakage Current
(VDDSS = 6256 Vdc, VGGSS = 0)
ZGeartoe((VV—GDGaSSStoe==uV25rc6oVeltVdaLdcgec,ea,VkDVDarGSgaS=ein=0CL0)ue)rarekangt e Current
GGaattee((V—VTGDhSSSro=e=us5r1hc0oVelVddLcdeV,caoV,klIDtaDaSgg==ee20C0)umrreAn)t
Drain-Source On-Voltage
ON C(VHGASR=A1C0TVEdRcI,SIDTI=C1SA)
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
SymVb(BoRl)DSS Min65
Typ
Max
UVndict
IDSSIDSS
——
——
11000 µµAAddcc
IDSSIGSS
——
——
11 µµAAddcc
IGSVS GS(th) 2
—2.6
14
µVAddcc
VDS(on)
0.32
Vdc
Gm — 1.6 —
S
DYNAMIC CHARACTERISTICS @ 25ºC
Input Capacitance (Capacitance includes internal matching capacitors)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
DOuYtpN(VuAtDCSM=apI2Ca6ciCVtadHnccA,eVRGAS =C0T,Ef =RI1SMTHICz)S (1)
Ciss — 50 — pF
Coss — 32 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss — 1.4 —
pF
FRUF NFUCNTCITOIONNAALL TTEESSTTSS@(In25MºC/A(I-nCMO/MA-CTOeMstTFeisxttuFrixet)u(r2e))
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps 12 13 — dB
Two-Tone Drain Efficiency
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
EFF (ŋ) — 33 —
%
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD — -30 — dBc
Two-Tone Common-Source Amplifier Power Gain
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps 12 13 — dB
Two-Tone Drain Efficiency
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
EFF (ŋ) — 33 —
%
Two-Tone Intermodulation Distortion
(VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD — -30 -28 dBc
Output VSWR Tolerance
(VDD = 26 Vdc, POUT = 30 W, IDQ = 300 mA, f = 1900 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ No Degradation In Output Power
Before and After Test
2





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