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RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V
5/14/04
Preliminary
MAPLST1820-090CF
Features
Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications
Q
Package Style
Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Q Output Power: 45W Q Power Gain: 13dB (typ.) Q Efficiency: 35% (typ.)
P-240
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 1800 — 2000 MHz, 90W, 26V
MAPLST1819-090CF
5/14/04
Preliminary
Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 26 Vdc, Id = 60 mA) Gate Quiescent Voltage (VDS = 26 Vdc, Id = 900 mA) Drain-Source On-Voltage (VGS = 10 Vdc, Id = 1 A) Forward Transconductance (VGS = 10 Vdc, Id = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Common-Source Amplifier Gain (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) Drain Efficiency (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) Input Return Loss (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) Output VSWR Tolerance (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gp EFF (ŋ) IRL Ψ — — — 13 35 -10 — — — dB % dB Crss — 4.5 — pF V(BR)DSS IDSS IGSS VGS(th) VDS(on) VDS(on) Gm 65 — — 2 3 — — — — — — — 0.10 7.0 — 10 1 5 0.4 — — Vdc µAdc µAdc Vdc Vdc Vdc S Symbol Min Typ Max Unit
No Degradation In Output Power Before and After Test
2
RF Power LDMOS Transistor, 1800 — 2000 MHz, 90W, 26V
MAPLST1819-090CF
5/14/04
Preliminary
14 13 12 11
1880MHz, 26VDC, IDQ=900mA
45 40 35 30
Gain (dB)
9 8 7 6 5 28
Gain Efficiency EVM
20 15 10 5 0
30
32
34
36
38
40
42
44
46
48
Pout (avg.) dBm
Graph 1. EDGE: Gain and Error Vector Magnitude vs. Output Power
-30 -35 -40 -45 ACPR (dBc) -50 -55 -60 -65 -70 -75 -80 35
1880MHz, 26VDC, IDQ=900mA
50 45 40 Efficiency (%) 35
ACPR (400KHz) ACPR (600kHz) Eff (%)
30 25 20 15 10 5 0
37
39
41
43
45
47
49
Pout (dBm)
Graph 2. EDGE: Efficiency and Adjacent Channel Power Ratio vs. Output Power
Eff./EVM (%)
10
25
3
RF Power LDMOS Transistor, 1800 — 2000 MHz, 90W, 26V
MAPLST1819-090CF
5/14/04
Preliminary
Package Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information.
North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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