Effect Transistor. MAPLST1820-090CF Datasheet

MAPLST1820-090CF Transistor. Datasheet pdf. Equivalent

Part MAPLST1820-090CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V 5/14/04 Pre.
Manufacture Tyco Electronics
Total Page 4 Pages
Datasheet
Download MAPLST1820-090CF Datasheet



MAPLST1820-090CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 1800 — 2000 MHz, 90W, 26V
5/14/04
Preliminary
Features
Package Style
Designed for base station applications in the
1805-1880MHz or 1930-1990MHz Frequency
Band. Suitable for GSM, EDGE, TDMA,
CDMA, and multi-carrier amplifier
applications
Q Typical EDGE performance @ 1880MHz,
26V, Idq=900mA:
Q Output Power: 45W
Q Power Gain: 13dB (typ.)
Q Efficiency: 35% (typ.)
P-240
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
+20, -20
206
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
0.85
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.



MAPLST1820-090CF
RF Power LDMOS Transistor, 1800 — 2000 MHz, 90W, 26V
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
Gate Threshold Voltage
(VDS = 26 Vdc, Id = 60 mA)
Gate Quiescent Voltage
(VDS = 26 Vdc, Id = 900 mA)
Drain-Source On-Voltage
(VGS = 10 Vdc, Id = 1 A)
Forward Transconductance
(VGS = 10 Vdc, Id = 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
Common-Source Amplifier Gain
(VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W)
Drain Efficiency
(VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W)
Input Return Loss
(VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W)
Output VSWR Tolerance
(VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
MAPLST1819-090CF
5/14/04
Preliminary
Symbol Min Typ Max Unit
V(BR)DSS
65
Vdc
IDSS — — 10 µAdc
IGSS — —
1 µAdc
VGS(th)
2
5
Vdc
VDS(on)
3
— 0.4 Vdc
VDS(on)
0.10
Vdc
Gm — 7.0 —
S
Crss — 4.5 —
pF
Gp — 13 — dB
EFF (ŋ) — 35 —
%
IRL — -10 — dB
Ψ No Degradation In Output Power
Before and After Test
2





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