Effect Transistor. MAPLST1900-030CF Datasheet

MAPLST1900-030CF Transistor. Datasheet pdf. Equivalent

Part MAPLST1900-030CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 Pr.
Manufacture Tyco Electronics
Total Page 5 Pages
Datasheet
Download MAPLST1900-030CF Datasheet



MAPLST1900-030CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 1890 — 1925 MHz, 30W, 26V
10/31/03
Preliminary
Features
Designed for PHS applications in the
1890-1925 MHz frequency band.
Q Typical performance in PHS mode at
-68 dBc ACPR (600kHz):
Q Average Output Power: 8W
Q Gain: 13dB (typ.)
Q Efficiency: 26% (typ.)
Q 10:1 VSWR Ruggedness at 8W, 26V,
1890MHz)
Package Style
MAPLST1900-030CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
97
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.



MAPLST1900-030CF
RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown VoClthaagreacteristic
OFF(VCGHSA=R0AVCdTcE,RIDIS=T2IC0SµAdc)
Zero Gate Voltage Drain Leakage Current
(VDDSS = 6256 Vdc, VGGSS = 0)
ZGeartoe((VV—GDGaSSStoe==uV25rc6oVeltVdaLdcgec,ea,VkDVDarGSgaS=ein=0CL0)ue)rarekangt e Current
GGaattee((V—VTGDhSSSro=e=us5r1hc0oVelVddLcdeV,caoV,klIDtaDaSgg==ee10C)murAre)nt
Gate Quiescent Voltage
ON C(VHDAS R=A2C6TVEdRc,ISIDT=IC2S50 mA)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
DInYpuNt CAaMpaIcCitaCncHeA(IRncAluCdiTngERInIpSuTt MICatSch(i1n)g Capacitor in Package)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FRUevNerCseTITOraNnsAfeLr CTaEpSacTitSan(cIen M/A-COM Test Fixture) (2)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
PHS Gain
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1920 MHz)
PHS Drain Efficiency
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1920 MHz)
PHS ACPR @ 600 kHz offset
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1905 MHz)
PHS ACPR @ 900 kHz offset
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1905 MHz)
PHS Gain
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1890 MHz)
PHS Drain Efficiency
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1890 MHz)
Input Return Loss
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1920 MHz)
Output VSWR Tolerance
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1890 MHz)
Symbol Min
MAPLST1900-030CF
10/31/03
Preliminary
Typ Max Unit
SyVm(BbRo)DlSS Mi6n5
Typ
Max
UnVidt c
IDSIDSSS
——
IDSIGSSS
IGVSGSS(th)
VDS(Q)
——
—2
2
VDS(on)
Gm —
—— 101 µAµdAcdc
—— 1 1 µAµdAcdc
—— 1 4 µAVddcc
— 4.5 Vdc
0.2 — Vdc
1.2 —
S
Ciss — 90 —
Coss — 32.5 —
Crss — 1.5 —
pF
pF
pF
Gps — 13.0 — dB
EFF (ŋ) — 26 — %
ACPR
-68
— dBc
ACPR
-78
— dBc
Gps — 13.0 — dB
EFF (ŋ) — 26 — %
IRL — -12 -9 dB
Ψ No Degradation In Output Power
Before and After Test
2





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