Effect Transistor. MAPLST2122-015CF Datasheet

MAPLST2122-015CF Transistor. Datasheet pdf. Equivalent

Part MAPLST2122-015CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V 8/20/03 Pre.
Manufacture Tyco Electronics
Total Page 5 Pages
Datasheet
Download MAPLST2122-015CF Datasheet



MAPLST2122-015CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 15W, 28V
8/20/03
Preliminary
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
Q 15W Output Power at P1dB (CW)
Q 12dB Minimum Gain at P1dB (CW)
Q W-CDMA Typical Performance:
(28VDC, -45dBc ACPR, 5MHz offset,
4.096MHz BW)
Q Output Power: 2.2W (typ.)
Q Gain: 13dB (typ.)
Q Efficiency: 17% (typ.)
Q 10:1 VSWR Ruggedness (CW @ 15W,
28V, 2110MHz)
Package Style
MAPLST2122-015CF
Maximum Ratings
Drain—Source Voltage
Gate—Source Voltage
Parameter
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
54.7
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
3.2
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.



MAPLST2122-015CF
RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA
MAPLST2122-015CF
8/20/2003
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown VoClthaagreacteristic
OFF(VCGHSA=R0AVCdTcE,RIDIS=T2IC0SµAdc)
Zero Gate Voltage Drain Leakage Current
(VDDSS = 6258 Vdc, VGGSS = 0)
ZGeartoe((VV—GDGaSSStoe==uV25rc6oVeltVdaLdcgec,ea,VkDVDarGSgaS=ein=0CL0)ue)rarekangt e Current
GGaattee((V—VTGdhSsSro==eus25rhc8oVeVlddLdceVc,a,oVkIlDdtaaS=gg=ee10Cm)uArr)ent
Gate Quiescent Voltage
ON C(VHdAs =RA28CTVEdcR,ISIdT=IC2S50 mA)
Drain-Source On-Voltage
(Vgs = 10 Vdc, Id = 1 A)
Forward Transconductance
(Vgs = 10 Vdc, Id = 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
DReYvNerAseMTrIaCnsCfeHr ACaRpAacCitaTnEcRe ISTICS (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (2)
Two-Tone Common-Source Amplifier Power Gain
FUN(VCDTS =IO2N8 AVdLc,TPEOUSTT=S1(5InWMPE/AP.-CIDOQ =M15T0emstAF,ixture) (2)
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Third Order Intermod
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Two-Tone Third Order Intermod
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Input Return Loss
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Output VSWR Tolerance
(VDD = 28 Vdc, Pout = 30 W, IDQ = 250 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Symbol Min
Typ
Max
Unit
SyVm(BbRo)DlSS Mi6n5
Typ
Max
UnVidt c
IDSIDSSS
——
IDSIGSSS
IGVSGSS(th)
VDS(Q)
——
—2.5
2.5
VDS(on)
Gm —
——
——
—3.0
3.5
0.2
1.0
101 µAµdAcdc
1 1 µAµdAcdc
14.0 µAVddcc
4.5 Vdc
— Vdc
—S
Crss
0.9
pF
Gps 12 12.8 —
dB
EFF (ŋ) — 32 — %
IMD — -30 — dBc
IRL — -12 — dB
Gps 12 12.8 —
dB
EFF (ŋ) — 32 — %
IMD — -30 — dBc
IRL — -12 -10 dB
Ψ No Degradation In Output Power
Before and After Test
2





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