Effect Transistor. MAPLST2122-030CF Datasheet

MAPLST2122-030CF Transistor. Datasheet pdf. Equivalent

Part MAPLST2122-030CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 4/6/2005 Pr.
Manufacture Tyco Electronics
Total Page 5 Pages
Datasheet
Download MAPLST2122-030CF Datasheet



MAPLST2122-030CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 30W, 28V
4/6/2005
Preliminary
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
Q 30W Output Power at P1dB (CW)
Q 12dB Minimum Gain at P1dB (CW)
Q W-CDMA Typical Performance:
(28VDC, -45dBc ACPR @ 4.096MHz)
Q Output Power: 4.5W (typ.)
Q Gain: 12dB (typ.)
Q Efficiency: 16% (typ.)
Q 10:1 VSWR Ruggedness (CW @ 30W,
28V, 2110MHz)
Package Style
MAPLST2122-030CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
97
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.



MAPLST2122-030CF
RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V
MAPLST2122-030CF
4/6/2005
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown VoClthaagreacteristic
OFF(VCGHSA=R0AVCdTcE,RIDIS=T2IC0SµAdc)
Zero Gate Voltage Drain Leakage Current
(VDDSS = 6258 Vdc, VGGSS = 0)
ZGeartoe((VV—GDGaSSStoe==uV25rc6oVeltVdaLdcgec,ea,VkDVDarGSgaS=ein=0CL0)ue)rarekangt e Current
GGaattee((V—VTGDhSSSro=e=us5r1hc0oVelVddLcdeV,caoV,klIDtaDaSgg==ee10C)murAre)nt
Gate Quiescent Voltage
ON C(VHDAS R=A2C8TVEdRc,ISIDT=IC2S50 mA)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
DInYpuNt CAaMpaIcCitaCncHeA(IRncAluCdiTngERInIpSuTt MICatSch(i1n)g Capacitor in Package)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FRUevNerCseTITOraNnsAfeLr CTaEpSacTitSan(cIen M/A-COM Test Fixture) (2)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Input Return Loss
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Output VSWR Tolerance
(VDD = 28 Vdc, POUT = 30 W, IDQ = 250 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Symbol Min
Typ
Max
Unit
SyVm(BbRo)DlSS Mi6n5
Typ
Max
UnVidt c
IDSIDSSS
——
IDSIGSSS
IGVSGSS(th)
VDS(Q)
——
—2
2
VDS(on)
Gm —
—— 101 µAµdAcdc
—— 1 1 µAµdAcdc
—— 1 4 µAVddcc
— 4.5 Vdc
0.2 — Vdc
1.2 —
S
Ciss — 90 —
Coss — 32.5 —
Crss — 1.5 —
pF
pF
pF
Gps — 12.5 — dB
EFF (ŋ) — 36 — %
IMD —
-30 -28 dBc
IRL — -12 — dB
Gps — 12.5 — dB
EFF (ŋ) — 36 — %
IMD —
-30 -28 dBc
IRL — -12 -9 dB
Ψ No Degradation In Output Power
Before and After Test
2





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