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RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V
4/6/2005
Preliminary
MAPLST2122-060CF
Features
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
Q Q Q
Package Style
60W output power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Q Output Power: 7.5W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz)
Q
MAPLST2122-060CF
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 175 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.0 Unit ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V
MAPLST2122-060CF
4/6/2005
Preliminary
Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage (V GS = 0 Vdc, ID = 20 µAdc) OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS 65 Vdc, VGS DS = 28 GS = 0) Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (V Vdc, VV 0) DS = = (VGS = =5 26 Vdc, 0)
DS GS
Symbol
Min
Typ
Max
Unit
Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm
Min 65 — — — — 2 — 2 — —
Typ — — — — — — — — 0.4 2.4
Max — 1 10 11 1 4
Unit Vdc µAdc µAdc µAdc µAdc Vdc µAdc Vdc Vdc S
Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON (V CHARACTERISTICS DS = 28 Vdc, ID = 500 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Input Capacitance (Including Input Matching DYNAMIC CHARACTERISTICS (1) Capacitor in Package) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance FUNCTIONAL TESTS (In M/A-COM (VDS = 28 Vdc, VGS = 0, f = 1 MHz)
4.5 — —
Ciss Coss Crss
— — —
180 65 3.0
— — —
pF pF pF
Test Fixture) (2)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output VSWR Tolerance (VDD = 28 Vdc, POUT = 60 W, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps — 12.0 — dB
EFF (ŋ)
—
35
—
%
IMD
—
-30
-28
dBc
IRL
—
-12
—
dB
Gps
—
12.0
—
dB
EFF (ŋ)
—
35
—
%
IMD
—
-30
-28
dBc
IRL
—
-12
-9
dB
Ψ
No Degradation In Output Power Before and After Test 2
RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V
MAPLST2122-060CF
4/6/2005
Preliminary
C1 Ceramic Chip Capacitor, 10 pF C2,C5 Ceramic Chip Capacitor, 0.5 pF C3,C4 Ceramic Chip Capacitor, 1.8 pF C6,C7,C12,C13 Chip Capacitor, 8.2 pF C8, C10 Chip Capacitor, 1 µF C9, C11 Chip Capacitor, 0.1 µF C14,C15 Ceramic Capacitor, 100 µF Z1-Z8 Distributed Microstrip Element
J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft B Series L2, L3 Inductor, 18.5 nH, CoilCraft B Series P1,P2 Connector, 5 Pin Q1 Transistor, MAPLST2122-060CF R1 Chip Resistor, 10 Ohm PC Board (74350144-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides
Figure 1. 2110—2170 MHz Test Fixture Schematic
Figure 2. 2110—2170 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V
MAPLST2122-060CF
4/6/2005
Preliminary
14 13 12
VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3.84MHz BW, 16 DPCH
25 20 15 10
Efficiency
11 10 9 8 7 6 25
Gain
5 0
30
35
40
POUT (dBm) Avg.
Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power
-30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 25
VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3..