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Advanced Datasheet
Rev 17-06-2005 MAPRST1030-1KS
Avionics Pulsed RF Power Transistor 1000 Watts, 1...
www.DataSheet4U.com
Advanced Datasheet
Rev 17-06-2005 MAPRST1030-1KS
Avionics Pulsed RF Power
Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle
Features
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
MAXIMUM RATINGS AT 25°C Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25° C Junction Temperature Storage Temperature
Symbol
VCES VEBO IC PTOT TJ TSTG
Rating
65 3.0 250 11.6 200 -65 to +200
Units
V V A kW °C °C
ELECTRICAL CHARACTERISTICS AT 25°C Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance RF Power Gain Collector Efficiency Input Return Loss Load Mismatch Stability Load Mismatch Tolerance
Symbol
BVCES ICES RTH PG
Min
65 8.0 45 -
Max
30 0.015 -10 1.5:1 3:1
Units
V mA °C/W dB % dB IC=250mA VCE=50V
Test Conditions
VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz VCC=50 V, POUT=1000 W, F= 1.03 GHz
ηC
RL VSWR-S VSWR-T
BROADBAND TEST FIXTURE IMPEDANCE F (GHz)
1.03
Z IF (Ω)
1.8 - j2.2
Z OF (Ω)
0.5 - j1.0
M/A-COM RF Power Innovations 1742 CRENSHAW BLVD TORRANC...