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MAPRST2729-170M RADAR PULSED POWER TRANSISTOR
170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty...
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MAPRST2729-170M RADAR PULSED POWER
TRANSISTOR
170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle
Preliminary Specification, Rev 03/30/2005 FEATURES
OUTLINE DRAWING
Designed for ATC Radar Applications
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature VCES VEBO IC PD TSTG TJ 65 3.0 27 TBD -65 to +200 200
Units
V V A W °C °C
ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min
Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Power Output Power Gain Collector Efficiency Input Return Loss Load Mismatch Stability Load Mismatch Tolerance BVCES ICES RTH Pout GP 65 170 8.5 40 10 -
Max
15 .25 (TBD) 1.5:1 2:1
Units
V mA °C/W Wpk dB % dB IC=50mA VCE=36V
Test Conditions
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
ηC
RL VSWR-S ...