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Monolithic PIN SP4T Diode Switch
MASW-004100-1193
Rev. 2
Features
• • • • Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction
Description
The MASW-004100-1193 is a SP4T series-shunt broad band switch made with M/A-COM’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeterwave frequencies.
Applications
These high performance switches are suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50nS switching speeds are achieved.
J3
J4
Absolute Maximum Ratings TAMB = +25°C ( Unless Otherwise Specified )
Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (± 20mA) Bias Current ( Forward ) Applied Voltage ( Reverse ) Value -65°C to +125°C -65°C to +150°C +33dBm ± 20mA -25 Volts
J2
J5
J1
Notes: Exceeding these limits may cause permanent damage.
1
Monolithic Pin Diode Series-Shunt Switch
MASW-004100-1193
Rev 2
Electrical Specifications @ TAMB = +25oC, ± 20mA Bias Current (On-Wafer Measurements)
Parameter Insertion Loss Isolation Input Return Loss Output Return Loss Switching Speed
1
Frequency 20 GHz 20 GHz 20 GHz 20 GHz 10 GHz
Minimum 28
Nominal 0.9 34 15 15 50
Maximum 1.3
Units dB dB dB dB nS
Notes:
1.) Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150Ω – 220Ω to achieve 50nS rise and fall times.
Typical Driver Connections
Control Level ( DC Current ) at Port J2 -20mA +20mA +20mA +20mA J3 +20mA -20mA +20mA +20mA J4 +20mA +20mA -20mA +20mA J5 +20mA +20mA +20mA -20mA Condition of RF Output J1-J2 Low Loss Isolation Isolation Isolation Condition of RF Output J1-J3 Isolation Low Loss Isolation Isolation Condition of RF Output J1-J4 Isolation Isolation Low Loss Isolation Condition of RF Output J1-J5 Isolation Isolation Isolation Low Loss
Assembly Considerations
Cleanliness
Chips should be handled in a clean environment free of organic contamination.
Electro-Static Sensitivity
The MASW-004100-1193 PIN switch is ESD, Class 1A procedures should be used. sensitive (HBM). Proper ESD handling equipment and
Die Wire Bonding
Thermosonic wedge wire bonding using ¼ x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum .