SP4T Switch. MASW4060G Datasheet

MASW4060G Switch. Datasheet pdf. Equivalent

Part MASW4060G
Description GaAs SP4T Switch
Feature www.DataSheet4U.com RoHS Compliant MASW4060G V3 Pad Layout GaAs SP4T Switch DC - 4.0 GHz Features .
Manufacture Tyco Electronics
Datasheet
Download MASW4060G Datasheet



MASW4060G
www.DataSheet4U.com
GaAs SP4T Switch
DC - 4.0 GHz
Features
Low Insertion Loss, 1.2 dB Typical
Fast Switching Speed, 4 nS Typical
Ultra Low DC Power Consumption
Terminated Option
RoHS* Compliant
Description
M/A/COM’s MASW4060G is an SPDT absorptive or
reflective GaAs MESFET MMIC. This part combines
small size, low insertion loss and power
consumption with high isolation. Ideal for many
applications and module use. It will function well for
designs below 4.0 GHz.
The MASW4060G is fabricated using a mature 1-
micron gate length GaAs MESFET process. The
process features full chip passivation for increased
performance and reliability.
Ordering Information
Part Number
MASW4060G
1. Die quantity varies.
Schematic
Package
DIE 1
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
RoHS
Compliant
Pad Layout
MASW4060G
V3
Die Size - Inches (mm)
0.076 x 0.058 x 0.010 (1.920 x 1.470 x 0.25)
Absolute Maximum Rating2,3
Parameter
Absolute Maximum
Control Value (A or B)
-8.5 Vdc
Max Input RF Power
+34 dBm
Storage Temperature
-65°C to +175°C
Max Operating Temperature
+175°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
Bond Pad Dimensions
Bond Pad
Dimensions - Inches
(mm)
RF 0.005 x 0.005 (0.125 x 0.125)
RF1, RF2, RF3, RF4
0.004 x 0.004 (0.100 x 0.100)
A1, A2, A3, A4
0.004 x 0.004 (0.100 x 0.100)
B1, B2, B3, B4
0.004 x 0.004 (0.100 x 0.100)
G1, G2, G3, G4 4
0.008 x 0.004 (0.200 x 0.100)
T1, T2, T3, T4 5
0.006 x 0.005 (0.150 x 0.125)
4. “G” pads designate internal grounds necessary to maintain
data sheet isolation. These are not DC blocked and would
need to be blocked if positive control voltage is required.
5. “T” pads denote a 50 W termination path connected to each
RFx port. If bonded to ground, it will cause the related port to
be absorbative, or matched, in the isolated condition. As
described in note 3, these pads are also not DC blocked.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.



MASW4060G
GaAs SP4T Switch
DC - 4.0 GHz
RoHS
Compliant
MASW4060G
V3
Electrical Specifications: 0/-5 Vdc, 50 Ω, -55°C to +85°C 6
Parameter
Insertion Loss
Isolation
VSWR
Input P-1dB
IP2
IP3
Test Conditions
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
0.5 GHz
0.5 - 4.0 GHz
Two Tone Input Power up to +5 dBm
0.5 GHz
0.5 - 4.0 GHz
Two Tone Input Power up to +5 dBm
0.5 GHz
0.5 - 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dB
dB
Ratio
Ratio
Ratio
Ratio
dBm
dBm
dBm
dBm
dBm
dBm
Min.
50
45
40
30
Typ.
+17
+27
+45
+60
+35
+46
Max.
1.3
1.3
1.3
1.7
1.4:1
1.4:1
1.5:1
2.0:1
Control Current
VIN Low (0 to –0.2 V)
VOUT High (-5 V)
µA — — 25
µA — 50 200
T-rise, T-fall
10% to 90% RF and 90% to 10% RF
nS — 2 —
TON, TOFF
50% control to 90% RF, and 50% control to 10% RF
nS
4
Transients
In Band
mV — 20 —
6. Loss changes ±0.0025 dB/°C. (From -55°C to +85°C)
Truth Table 7
A1 B1 A2 B2 A3 B3 A4 B4 ANT- ANT- ANT- ANT-
RF1 RF2 RF3 RF4
1 0 0 1 0 1 0 1 On Off Off Off
0 1 1 0 0 1 0 1 Off On Off Off
0 1 0 1 1 0 0 1 Off Off On Off
0 1 0 1 0 1 1 0 Off Off Off On
7. 0 = 0 V to –0.2 V, 1 = -5 V.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Wire Bonding
A. Ball or wedge with 1.0 mil diameter pure gold
wire. Thermosonic wirebonding with a nominal
stage temperature of 150°C and a ball bonding
force of 40 to 50 grams or wedge bonding force
of 18 to 22 grams is recommended. Ultrasonic
energy and time should be adjusted to the
minimum levels achieve reliable wirebonds.
B. Wirebonds should be started on the chip and
terminated on the package. GND bonds
should be as short as possible; at least three
and no more than four bond wires from ground
pads to package are recommended.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.





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