MASWGM0003-DIE

www.DataSheet4U.com Switch, Single-Pole, Double-Throw 2.0—8.0 GHz Features ♦ ♦ ♦ ♦ ♦ ♦ MASWGM0003-DIE 903231 — Preliminary Information 2.0-8.0 GHz Operation 3 dB Insertion Loss Non-Reflective TTL Control Excellent Match on Off Port MSAG™ Process Description The MASWGM0003-DIE is a single-pole, double-throw switch that is fully matched to 50 ohms on both the input and output. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ ♦ ♦ ♦ ♦ Test Equipment and Instrumentation Electronic Warfare Weather and Military Radar Point to Point Communications VSAT Electrical Characteristics: TB = 25°C1, Z0 = 50Ω, VEE = -5V Parameter Bandwidth Insertion Loss @ 4 GHz Insertion Loss @ 8 GHz Isolation Input VSWR Output VSWR (On) Output VSWR (Off) Input Third Order Intercept Input 1-dB Compression Point 1. TB = MMIC Base Temperature 1 M/A-COM Inc. and its affiliat...