MASWSS0100

www.DataSheet4U.com GaAs SP3T 2.5 V High Power Switch 0.1 - 3.0 GHz Features Low Voltage Operation: 2.5V Low Harmonics: -70 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.5 dB at 1 GHz High Isolation: 20 dB at 2 GHz 0.5 micron GaAs PHEMT Process Supplied as Known Good Die MASWSS0100 V2 Die Bond Pad Layout V1 RFC V3 Description M/A-COM’s MASWSS0100 is a GaAs PHEMT MMIC single pole three throw (SP3T) high power switch die. The MASWSS0100 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM, DCS and PCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage. The MASWSS0100 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. RF1 RF2 V2 RF3 Pad Configuration Pad Name V1 RF1 RF2 V2 Description Control 1 RF Port 1 RF Port 2 Control 2 RF Port 3 Control 3 Antenna/Common Port Ordering Information Part Number MASWSS0100-DIE 1. Die quantity varies. 1 RF3 V3 RFC Product Description Separated Die on Grip Ring1 Absolute Maximum Ratings 2,3 Parameter Input Power Voltage Operating Temperature Storage Temperature Absolute Maximum +38 dBm ± 8.5 volts -40°C to +85°C -65°C to +...