HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
www.DataSheet4U.com
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FE...
www.DataSheet4U.com
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz Micro-X ceramic (84C) package
APPLICATIONS
20 GHz-band DBS LNB Other K-band communication systems
ORDERING INFORMATION
Part Number NE350184C-T1 NE350184C-T1A Order Number NE350184C-T1-A NE350184C-T1A-A Package 84C (Pb-Free) Quantity 1 kpcs/reel 5 kpcs/reel Marking A Supplying Form 12 mm wide embossed taping Pin 4 (Gate) faces the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot
Note
Ratings 4 −3 IDSS 80 165 +150 −65 to +150
Unit V V mA
µA
mW °C °C
Tch Tstg
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10584EJ01V0DS (1st edition) Date Published November 2005 CP(K)
NE350184C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 − TYP. 2 10 − MAX. 3 15 0 Unit V mA dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Gate to Sour...