N-CHANNEL HJ-FET. NE350184C Datasheet

NE350184C HJ-FET. Datasheet pdf. Equivalent

Part NE350184C
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Feature www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLI.
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NE350184C
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HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
NE350184C-T1 NE350184C-T1-A 84C (Pb-Free)
NE350184C-T1A NE350184C-T1A-A
Quantity
1 kpcs/reel
5 kpcs/reel
Marking
Supplying Form
A • 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
Ptot Note
Tch
Tstg
Ratings
4
3
IDSS
80
165
+150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
mA
µA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)



NE350184C
NE350184C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
1
5
TYP.
2
10
MAX.
3
15
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
Test Conditions
IGSO VGS = 3 V
IDSS VDS = 2 V, VGS = 0 V
VGS (off) VDS = 2 V, ID = 100 µA
gm VDS = 2 V, ID = 10 mA
NF VDS = 2 V, ID = 10 mA, f = 20 GHz
Ga
MIN.
15
0.2
40
11
TYP.
0.7
13.5
MAX.
10
70
2.0
1.0
Unit
µA
mA
V
mS
dB
dB
2 Data Sheet PG10584EJ01V0S





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